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onsemi QFET Type P-Channel P-Channel QFET MOSFET 2.7 A 500 V Enhancement 3-Pin TO-220AB FQP3P50
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | FQP3P50 |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 671-5118P Brand: [onsemi](https://in.rsdelivers.com/brands/onsemi)Manufacturers Part No.: FQP3P50 |
Key Features
- Advanced QFET planar MOSFET design ensures reduced on-state and switching losses.
- Maximum continuous drain current of 2.7 A with a maximum drain-source voltage of 500 V.
- Enhancement mode device with 3-pin TO-220AB through-hole package for easy integration.
- Typical gate charge of 18 nC and maximum drain-source resistance of 4.9 Ω support efficient switching.
- Operating temperature range from -55 °C to 150 °C for robust performance.
- Maximum power dissipation rating of 85 W ensures reliable thermal handling.
- Suitable for power supplies, power factor correction, DC-DC converters, plasma display panels, lighting ballasts, and motion control systems.
Product Description
onsemi FQP3P50 is a P-Channel QFET MOSFET transistor designed to deliver efficient power conversion and control in various industrial and electronic applications. This device operates at a maximum continuous drain current of 2.7 A and withstands drain-source voltages up to 500 V. Featuring an enhancement mode channel and housed in a three-pin TO-220AB through-hole package, it provides robust and reliable switching performance.
The FQP3P50 integrates advanced QFET planar MOSFET technology developed by Fairchild Semiconductor, offering excellent on-state resistance and minimized switching losses. Its typical gate charge of 18 nC contributes to rapid switching capabilities, essential for high-frequency power handling.
Thermal performance is supported by a maximum power dissipation of 85 W and an operating temperature range from -55 °C to 150 °C, making it suitable for demanding environmental conditions and continuous operation.
Applications include power supplies, where efficient energy conversion is critical, power factor correction circuits improving AC power quality, DC-DC conversion for voltage regulation, plasma display panel driving, electronic lighting ballasts, and precision motion control systems.
Advanced planar QFET technology ensures high reliability and efficiency. 3-pin TO-220AB package simplifies mounting and cooling. Low on-resistance reduces energy losses during conduction. Designed for enhancement mode to allow easy switching in circuits.
Wide temperature rating ensures performance stability under various conditions. High power dissipation rating supports demanding industrial use. Compatible with a range of power electronic and industrial control applications.
This product is a new item made in India under the onsemi brand. It fits within the Discrete Semiconductors category focusing on MOSFETs, providing quality and durability required in industrial electronics. Explore more onsemi products in the Discrete Semiconductors section for integrated semiconductor solutions suitable for industrial, commercial, and laboratory usage.
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Frequently Asked Questions
The maximum continuous drain current of this model is 2.7 A.
This P-Channel QFET MOSFET can withstand a maximum drain-source voltage of 500 V.
The typical gate charge for the FQP3P50 is 18 nC, which supports efficient switching capabilities.
It has a maximum power dissipation rating of 85 W, allowing for reliable thermal handling.
The operating temperature range for the FQP3P50 is from -55 °C to 150 °C.
The maximum drain-source resistance is 4.9 Ω, which contributes to its efficient performance.
This model is housed in a 3-pin TO-220AB through-hole package for easy integration.
This MOSFET utilizes advanced QFET planar technology, which minimizes on-state and switching losses.
Key features include reduced on-state losses, efficient switching, and a robust thermal performance rating.
This product is manufactured in India.
It is designed for power electronic and industrial control applications, providing quality and durability.
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