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onsemi PowerTrench N-Channel MOSFET, 10.8 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SOIC FDS4480

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onsemi PowerTrench N-Channel MOSFET, 10.8 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SOIC FDS4480

Name: onsemi PowerTrench N-Channel MOSFET, 10.8 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SOIC FDS4480
Brand: onsemi
SKU: 207600

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Category MOSFETs Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	5mm
Model	FDS4480
Width	4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	175°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	10.8A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	21mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	29nC
Maximum Gate Source Voltage Vgs	-20, +30V
Forward Voltage Vf	1.2V

Key Features

The device is part of the PowerTrench series optimized for efficient switching.
Maximum drain-source resistance is 21 milliohms, ensuring low conduction losses.
It operates within a temperature range from -55°C to 175°C, suitable for harsh environments.
Maximum gate-source voltage is between -20 and +30 volts, providing control flexibility.
Typical gate charge is 29 nanocoulombs at Vgs, facilitating fast switching.
Maximum power dissipation is rated at 2.5 watts, supporting moderate power applications.
Compact dimensions include 5 mm length, 4 mm width, and 1.5 mm height for space-saving PCB layouts.
Forward voltage drop is approximately 1.2 volts during conduction.

Product Description

onsemi FDS4480 PowerTrench N-Channel MOSFET is a robust discrete semiconductor designed for switching and amplification in electronic circuits. This enhancement-mode MOSFET supports a maximum continuous drain current of 10.8 amperes and can handle drain-source voltages up to 40 volts. Its 8-pin SOIC surface mount package allows for easy integration into compact electronic assemblies.

The PowerTrench technology ensures low on-resistance of 21 milliohms, which reduces power loss and enhances efficiency. The device's gate can tolerate voltages from -20 V to +30 V, providing a wide control margin. Its typical gate charge of 29 nanocoulombs allows for rapid switching performance, critical in power management and converter circuits.

Rated for operation across a wide temperature range from -55°C to 175°C, the FDS4480 is suitable for industrial, automotive, and consumer electronics applications. The maximum power dissipation of 2.5 watts supports moderate loads without additional cooling.

Its compact physical dimensions - length 5 mm, width 4 mm, and height 1.5 mm - make it ideal for dense circuit designs. With a forward voltage of 1.2 V, it maintains efficiency in power switching roles.

Typical applications include power management modules, motor controllers, and switching regulators in industrial, automotive, consumer electronics, and HVAC systems. The device is part of onsemi's PowerTrench series featuring advanced MOSFET technology.

It shows excellent surface mount packaging for space constrained design. Low Rds(on) reduces conduction losses in switching applications. Wide operating temperature ensures reliability in harsh environments. High gate voltage tolerance supports diverse control circuits.

Compact size helps reduce PCB footprint. Suitable for power conversion, motor control, and commercial electronics. Explore more high-performance MOSFETs and discrete semiconductors in our Electronics & Electricals category at EnvMart.