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Infineon IPP Type P-Channel MOSFET 62 A 100 V Enhancement 3-Pin TO-220 IPP330P10NMAKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.36mm |
| Model | IPP330P10NMAKSA1 |
| Width | 15.95mm |
| Mount Type | Surface |
| Series | IPP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 62A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | -189nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Type P channel enhancing MOSFET for power switching applications.
- Maximum continuous drain current of 62 amperes for high current capacity.
- Maximum drain-source voltage rating of 100 volts for reliability.
- Low Rds(on) resistance of 33 milliohms for efficient conduction.
- Maximum power dissipation capability of 300 W for robust operation.
- Surface mount TO-220 package ensuring standard footprint compatibility.
- Operating temperature range from -55°C to 175°C for versatility.
- Typical gate charge of 189 nC suitable for fast switching.
Product Description
Infineon IPP330P10NMAKSA1 is a high-performance Type P-Channel MOSFET, engineered for efficient power management in electronic and industrial applications. It features a maximum continuous drain current of 62 A and maximum drain-source voltage of 100 V. Packaged in a 3-pin TO-220 surface mount format, this MOSFET provides a robust solution for battery management, load switch, and reverse polarity protection use cases.
The device's enhancement mode operation delivers low on-resistance (Rds(on)) of 33 mΩ, enabling superior conduction efficiency and reduced heat dissipation. Its maximum power dissipation rating of 300 W supports demanding conditions, while it operates reliably within a temperature range from -55°C to 175°C, making it suitable for harsh industrial environments.
The typical gate charge of 189 nC supports fast switching frequencies, and avalanche ruggedness improves resilience against voltage spikes. Its compact TO-220 package with dimensions 10.36 mm length, 15.95 mm width, and 4.57 mm height adheres to industry-standard footprints for seamless PCB integration.
This MOSFET is widely used in applications including industrial automation systems and battery management solutions due to its reliable performance and ease of interfacing with microcontrollers.
Type P channel enhancing MOSFET for power switching applications. Maximum continuous drain current of 62 amperes for high current capacity. Maximum drain-source voltage rating of 100 volts for reliability. Low Rds(on) resistance of 33 milliohms for efficient conduction.
Maximum power dissipation capability of 300 W for robust operation. Surface mount TO-220 package ensuring standard footprint compatibility. Operating temperature range from -55°C to 175°C for versatility. Typical gate charge of 189 nC suitable for fast switching.
Avalanche rugged design ideal for industrial automation and battery management. Compact dimensions with height 4.57mm, width 15.95mm, and length 10.36mm. Explore more products in MOSFETs category at EnvMart for reliable semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 62 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The on-resistance (Rds(on)) of this model is 33 mΩ.
The maximum power dissipation capability of this MOSFET is 300 W.
It operates reliably within a temperature range from -55°C to 175°C.
The dimensions of the TO-220 package are 10.36 mm in length, 15.95 mm in width, and 4.57 mm in height.
The typical gate charge (Qg) for this model is 189 nC.
This model uses a surface mount type for installation.
This device is a Type P channel MOSFET.
It is suitable for applications such as battery management, load switching, and reverse polarity protection.
The maximum gate-source voltage (Vgs) for this MOSFET is 20 V.
The country of origin for this MOSFET is India.
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