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Vishay TrenchFET Type P-Channel MOSFET 30 V, 3.5 A, 3-Pin SOT-23 SI2307CDS-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.12mm
Length 3.04mm
Model SI2307CDS-T1-GE3
Width 2.64mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
ANSI/ESD S20.20 2014
BS EN 61340-5-1 2007
Channel Type Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 138mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.14W
Typical Gate Charge Qg @ Vgs 4.1nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • Features a low maximum drain-source resistance of 138 mΩ for efficient switching.
  • Compact 3-pin SOT-23 package ideal for dense circuit assemblies.
  • Operating temperature range from -55°C to 150°C for robust performance.
  • TrenchFET technology enhances switching speed and reduces conduction losses.
  • Designed for load switch applications in portable and compact devices.
  • Typical gate charge of 4.1 nC allows fast switching performance.
  • Maximum power dissipation rating of 1.14 W ensures reliability under load.
  • Halogen-free and lead (Pb) free for environmental compliance.

Product Description

The Vishay SI2307CDS-T1-GE3 is a TrenchFET type P-channel MOSFET designed for efficient power switching with a maximum continuous drain current of 3.5 A and a drain-source voltage rating of 30 V. Packaged in a compact 3-pin SOT-23 surface mount case, it is well suited for applications requiring reliable load switching and power management in portable and electronic devices.

Featuring TrenchFET technology, this MOSFET delivers enhanced switching speed and reduced conduction losses, improving overall efficiency. The device offers a typical gate charge of 4.1 nC, which supports fast switching cycles while maintaining low power dissipation of 1.14 W under typical operating conditions.

It operates reliably in a wide temperature range from -55°C to 150°C, making it adaptable for industrial, consumer electronics, and automotive applications where rugged performance is vital. The device is halogen-free and lead (Pb) free, complying with modern environmental standards.

Main technical advantages include a low maximum Rds(on) of 138 mΩ at typical gate voltages, a maximum gate-source voltage of ±20 V, and an enhancement mode channel for efficient operation. The compact dimensions of 3.04 mm length, 2.64 mm width, and 1.12 mm height allow for tight circuit layouts.

Use cases include load switches in portable devices, power management modules, and electronics requiring small, efficient MOSFETs with lower switching and conduction losses for extended product life and reliability.

Low on-resistance and fast switching improve power efficiency. Wide temperature range supports diverse industrial applications. Surface mount package enhances PCB space utilization. Lead-free construction meets environmental regulations.

TrenchFET technology optimizes thermal and electrical performance.

This Vishay MOSFET represents a high-performance solution for electronic design engineers seeking a reliable P-channel MOSFET with compact form and excellent electrical characteristics. Browse more MOSFET components and semiconductor solutions at EnvMart.

Vishay TrenchFET Type P-Channel MOSFET 30 V, 3.5 A, 3-Pin SOT-23 SI2307CDS-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SI2307CDS-T1-GE3 is 3.5 A.

This model has a maximum drain-source voltage rating of 30 V.

The typical gate charge for this MOSFET is 4.1 nC.

The dimensions of the SOT-23 package are 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height.

The maximum power dissipation rating for this model is 1.14 W.

It operates reliably in a temperature range from -55°C to 150°C.

The maximum gate-source voltage for this device is ±20 V.

This unit features an enhancement mode channel type.

The maximum drain-source resistance (Rds(on)) is 138 mΩ.

It is designed for load switch applications in portable and compact devices.

Yes, it is halogen-free and lead (Pb) free, ensuring compliance with modern environmental standards.

This model uses a surface mount type for installation.

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