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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.04mm |
| Model | SI2307CDS-T1-GE3 |
| Width | 2.64mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 138mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.14W |
| Typical Gate Charge Qg @ Vgs | 4.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
The Vishay SI2307CDS-T1-GE3 is a TrenchFET type P-channel MOSFET designed for efficient power switching with a maximum continuous drain current of 3.5 A and a drain-source voltage rating of 30 V. Packaged in a compact 3-pin SOT-23 surface mount case, it is well suited for applications requiring reliable load switching and power management in portable and electronic devices.
Featuring TrenchFET technology, this MOSFET delivers enhanced switching speed and reduced conduction losses, improving overall efficiency. The device offers a typical gate charge of 4.1 nC, which supports fast switching cycles while maintaining low power dissipation of 1.14 W under typical operating conditions.
It operates reliably in a wide temperature range from -55°C to 150°C, making it adaptable for industrial, consumer electronics, and automotive applications where rugged performance is vital. The device is halogen-free and lead (Pb) free, complying with modern environmental standards.
Main technical advantages include a low maximum Rds(on) of 138 mΩ at typical gate voltages, a maximum gate-source voltage of ±20 V, and an enhancement mode channel for efficient operation. The compact dimensions of 3.04 mm length, 2.64 mm width, and 1.12 mm height allow for tight circuit layouts.
Use cases include load switches in portable devices, power management modules, and electronics requiring small, efficient MOSFETs with lower switching and conduction losses for extended product life and reliability.
Low on-resistance and fast switching improve power efficiency. Wide temperature range supports diverse industrial applications. Surface mount package enhances PCB space utilization. Lead-free construction meets environmental regulations.
TrenchFET technology optimizes thermal and electrical performance.
This Vishay MOSFET represents a high-performance solution for electronic design engineers seeking a reliable P-channel MOSFET with compact form and excellent electrical characteristics. Browse more MOSFET components and semiconductor solutions at EnvMart.
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