DiodesZetex N-Channel MOSFET 2.2 A 20 V Enhancement Mode 3-Pin SOT-23 ZXMN2A01FTA

DiodesZetex ZXMN2A01FTA is a high-quality N-Channel MOSFET designed as a surface-mount device in a compact 3-Pin SOT-23 package. It operates at a maximum drain current of 2.2 A and withstands maximum drain-source voltages up to 20 V, making it ideal for power management and switching applications in electronic circuits.

Engineered with an enhancement mode channel, this MOSFET delivers a low maximum drain-source resistance of 225 mΩ, allowing efficient conduction and reducing power losses. The typical gate charge of 3 nC enhances switching performance with minimal gate drive requirements.

The device supports a maximum gate-source voltage range of -12 V to +12 V, providing reliable gate insulation and protection. Forward voltage is maintained at an efficient 850 mV, optimizing power dissipation under load conditions. It can safely dissipate up to 806 mW power, suitable for moderate power semiconductor applications.

Robust operating temperature range from -55°C to 150°C ensures reliable performance in harsh environmental conditions, including automotive applications, supported by the compliance with the AEC-Q101 automotive standard.

Its compact package dimensions - 3.05 mm length, 1.4 mm width, and 1.1 mm height - facilitate easy integration on dense PCBs where space optimization is essential. The surface mount design supports automated PCB assembly processes, promoting manufacturing efficiency.

The device operates in enhancement mode for reliable semiconductor switching applications. It has a maximum drain source resistance of 225 mΩ ensuring efficient conduction. The MOSFET has a typical gate charge of 3 nC at gate-source voltage.

Maximum gate-source voltage tolerance ranges from -12 V to +12 V, providing robust gate protection. Forward voltage is rated at 850 mV optimizing power efficiency. The power dissipation capacity is 806 mW, suitable for moderate power applications.

Operating temperature varies from -55°C to 150°C making it suitable for automotive and industrial environments. Compact dimensions with length 3.05 mm, width 1.4 mm, and height 1.1 mm facilitate space-saving PCB designs.

This MOSFET is well suited for industrial, automotive, electronic component manufacturing, and power management systems. It supports OEMs and electronics developers with reliable, efficient power switching and control solutions.

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