Vishay N-Channel MOSFET 27.8 A 100 V Enhancement Mode 8-Pin PowerPAK SO-8 SI7456DDP-T1-GE3

Vishay SI7456DDP-T1-GE3 is a professional-grade N-Channel MOSFET transistor specifically engineered for power electronics applications demanding efficient switching and high current handling. It features an enhancement mode channel with a maximum continuous drain current of 27.8 A and a maximum drain-source voltage rating of 100 V, making it ideal for power management circuits, DC-DC converters, and motor drive control.

This MOSFET is enclosed in a compact 8-pin PowerPAK SO-8 package designed for surface mount technology, optimizing PCB real estate while enabling efficient heat dissipation. The device assures low on-resistance with a typical maximum Rds of 0.031 Ω and supports power dissipation up to 35.7 W, allowing reliable operation in demanding environments.

Its operational longevity is supported by a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics systems. The maximum gate-source voltage rating of ±20 V safeguards the device against gate overstress, and the typical gate charge of 9.7 nC enhances switching performance for high-frequency applications.

Dimensional attributes of 1.12 mm height, 5.26 mm width, and 6.25 mm length enable easy integration into compact electronics designs. Additionally, the lead (Pb)-free compliance addresses modern ecological and regulatory standards.

Applications include industrial automation, power management, HVAC control systems, and other semiconductor-reliant equipment. This MOSFET provides dependable efficiency and robust performance for professional engineers and system integrators.

Supports an enhancement mode channel for improved switching functionality. Housed in a compact 8-pin PowerPAK SO-8 surface-mount package. Features a low maximum drain-source resistance of 0.031 Ω for minimal power loss. Maximum power dissipation capability of 35.7 W for robust operation.

Wide operating temperature range from -55°C to 150°C ensures reliability under harsh conditions. Typical gate charge of 9.7 nC enables fast switching speeds. Maximum gate-source voltage rating of ±20 V for enhanced device protection.

Dimensions optimized for PCB integration: height 1.12 mm, width 5.26 mm, length 6.25 mm. Lead (Pb)-free construction complies with environmental standards. Designed for surface mounting to modern electronic assemblies. Explore more Vishay semiconductor products and related power component solutions on EnvMart for high-quality and precision electronic components.

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