Nexperia Type P-Channel MOSFET, 3.9 A, 20 V Enhancement Mode, Surface Mount SOT-23 Package PMV65XP,215

Nexperia PMV65XP,215 is a P-Channel MOSFET transistor designed for discrete semiconductor applications requiring efficient switching and power management. This device features a maximum continuous drain current rating of 3.9 A and a maximum drain-source voltage of 20 V, making it suitable for various electronic and power control circuits.

The MOSFET is housed in a slim 3-pin SOT-23 surface mount package, facilitating easy PCB mounting and integration into compact designs. This type P-Channel device operates in enhancement mode, offering a low on-resistance of 76 mΩ, which minimizes conduction losses and improves overall energy efficiency in switching applications.

Designed to operate within a broad temperature range from -55°C to 150°C, this MOSFET is reliable for industrial, commercial, and automotive electronics exposed to varying environmental conditions. With a maximum power dissipation capability of 1.92 W, it supports moderate power loads effectively.

The gate-source voltage withstands up to ±12 V, providing robust gate control and protection during operation. A typical gate charge of 7.6 nC ensures quick switching speeds, beneficial for high-frequency applications.

Dimensions of 3 mm length, 1.4 mm width, and 1 mm height support compact PCB layouts. The MOSFET’s low forward voltage of -0.8 V aids in reducing voltage losses, further enhancing circuit performance.

This product is manufactured in China and is ideal for use in electronic components, power management circuits, and various industrial semiconductor applications such as power supplies, load switches, and signal processing units.

Designed for professional electronic manufacturing and engineering applications, the Nexperia PMV65XP,215 MOSFET delivers reliable operation and efficient power control in a compact surface mount form factor.

Supports maximum drain current of 3.9 A ensuring efficient power handling. Packaged in a compact SOT-23 surface mount design for PCB integration. Features enhancement mode channel with low Rds(on) of 76 mΩ for reduced power losses.

Operates reliably between -55°C and 150°C for wide environmental tolerance. Maximum power dissipation of 1.92 W suitable for moderate power applications. Maximum gate-source voltage rating is ±12 V for safe gate control.

Minimal typical gate charge of 7.6 nC allows fast switching capabilities. Forward voltage drop is -0.8 V contributing to efficiency in circuits. Precise dimensions: length 3 mm, width 1.4 mm, height 1 mm for compact electronic assemblies.

Explore more Nexperia semiconductor products on EnvMart for comprehensive electronic component solutions.

Explore more products in our Semiconductors category.