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onsemi PNP Power Transistor TO-252 Surface Mount 5 A Collector Current 25 V MJD210RLG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD210RLG |
| Width | 10.41mm |
| Mount Type | Surface |
| Series | MJD210 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -25V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 8V |
| Maximum Collector Base Voltage VCBO | 40V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum DC Collector Current Idc | -5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 10MHz |
Key Features
- Maximum collector current of 5 amperes suitable for power control circuits.
- Collector emitter voltage rating of 25 volts ensuring robust operation under load.
- Surface mount TO-252 package enables efficient heat dissipation and compact PCB design.
- High power dissipation capability of 12.5 watts for reliable performance.
- Wide operating temperature range from -65°C to 150°C for industrial applications.
- Minimum current gain (hFE) of 10 providing sufficient amplification in circuits.
- 4-pin configuration simplifies integration into electronic assemblies.
- Automotive qualified to AEC-Q101 standard assuring quality and durability.
Product Description
The onsemi MJD210RLG is a PNP bipolar power transistor housed in a TO-252 surface mount package, designed to handle collector currents up to 5 amperes and collector emitter voltages up to 25 volts. This transistor is engineered for power switching and amplification in electronics, offering a high power dissipation of 12.5 watts and a robust design suitable for harsh industrial environments.
With a four-pin configuration, it supports easy PCB mountability and efficient thermal management. The device operates reliably across a broad temperature range from -65°C to 150°C, making it ideal for automotive and industrial applications requiring durability and stability.
Featuring a minimum DC current gain (hFE) of 10 and a maximum transition frequency of 10 MHz, the MJD210RLG transistor delivers dependable switching speed and amplification performance. It complies with the AEC-Q101 automotive standard, ensuring stringent quality and longevity requirements are met.
Maximum collector current of 5 A for demanding power applications. Collector emitter voltage of 25 V for safe high voltage operation. Surface mount TO-252 package for compact design integration. Power dissipation up to 12.5 W facilitates effective thermal handling.
Wide operational temperature range (-65°C to 150°C) supports harsh environments. Minimum current gain of 10 provides reliable transistor switching. 4-pin layout suitable for versatile PCB configurations. Automotive AEC-Q101 qualification for quality assurance.
Transition frequency of 10 MHz for efficient signal processing.
This transistor is widely used in industrial electronics, automotive controls, and power management circuits. The product supports surface mount technology, contributing to miniaturization and enhanced manufacturing efficiency in electronic device assembly.
Explore our wide range of Semiconductors and power transistors suitable for various industrial implementations on EnvMart's Electronics & Electricals category.
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Frequently Asked Questions
The maximum collector current for this model is 5 amperes, making it suitable for demanding power applications.
The collector emitter voltage rating is 25 volts, ensuring safe operation under load conditions.
It has a high power dissipation capability of 12.5 watts, which facilitates effective thermal management.
This model operates reliably across a wide temperature range from -65°C to 150°C, suitable for industrial applications.
The transistor features a 4-pin configuration, simplifying integration into electronic assemblies.
The minimum DC current gain is 10, providing sufficient amplification in circuits.
The maximum transition frequency is 10 MHz, allowing for efficient signal processing.
This transistor is housed in a TO-252 surface mount package, enabling compact PCB design and efficient heat dissipation.
Yes, it is qualified to the AEC-Q101 automotive standard, ensuring quality and durability for automotive applications.
The maximum emitter base voltage (VEBO) is 8 volts.
The dimensions of this model are 6.73 mm in length, 10.41 mm in width, and 2.38 mm in height.
It is a PNP bipolar power transistor, designed for power switching and amplification applications.
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