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DiodesZetex Silicon Junction Switching Diode 75 V 300 mA 6-Pin SC-88 BAV756DW-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 2.2mm
Model BAV756DW-7-F
Width 1.35mm
Mount Type Surface
Series BAV756DW
Maximum Operating Temperature 150°C
Package Type SC-88
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Power Dissipation Pd 200mW
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V

Key Features

  • This diode operates with a peak forward surge current of 2 A.
  • Maximum power dissipation is rated at 200 mW for reliable performance.
  • It features a peak reverse recovery time of 4 nanoseconds, suitable for high-speed switching.
  • Operating temperature ranges from -65°C to 150°C, ensuring durability in diverse environments.
  • The diode's physical dimensions are length 2.2 mm, width 1.35 mm, and height 1 mm.
  • The device is suitable for surface mounting on PCBs in electronic and power applications.
  • BAV756DW series diode is manufactured in China with new product condition.

Product Description

DiodesZetex BAV756DW-7-F is a silicon junction switching diode designed for use in electronic components and discrete semiconductor applications, capable of handling up to 300 mA forward current with a peak reverse voltage of 75 V.

This surface mount device comes in a 6-pin SC-88 package, which facilitates compact PCB layouts for industrial, laboratory, and commercial electronics systems. It supports fast switching with a peak reverse recovery time of 4 ns, making it highly efficient for power rectification and signal modulation tasks.

Operating temperature ranges from -65°C to 150°C ensure robust performance under rigorous thermal conditions typical in electrical and electronic manufacturing environments. The maximum power dissipation rating of 200 mW allows stable operation without overheating during continuous use.

Physical dimensions measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height make this diode suitable for densely packed electronic assemblies. The peak forward surge current of 2 A provides additional durability against transient overloads.

This diode is optimized for surface mount applications on printed circuit boards. It features excellent switching speeds with minimal recovery time. Wide operating temperature range enhances reliability in harsh conditions.

Compact SC-88 packaging allows for high-density circuit designs. Its 6-pin configuration supports versatile circuit integration. Manufactured in China under brand DiodesZetex ensuring quality standards. New condition product suitable for industrial and commercial electronic applications.

Overall, the DiodesZetex BAV756DW-7-F is a high-performance switching diode ideal for power management, signal processing, and electronic control applications in laboratories, manufacturing equipment, and commercial electronics.

Explore additional DiodesZetex switching diode products at EnvMart to complement your industrial and electronic component requirements.

Explore more products in our Switching Diodes category.

DiodesZetex Silicon Junction Switching Diode 75 V 300 mA 6-Pin SC-88 BAV756DW-7-F
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Frequently Asked Questions

The maximum forward current of this diode is rated at 300 mA.

It features a peak reverse recovery time of 4 nanoseconds, suitable for high-speed switching applications.

The physical dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The maximum power dissipation is rated at 200 mW, allowing for stable operation without overheating.

This diode operates within a temperature range of -65°C to 150°C, ensuring reliability in various environments.

It comes in a 6-pin SC-88 package, which is suitable for surface mounting on PCBs.

The peak non-repetitive forward surge current is 2 A, providing additional durability against transient overloads.

The maximum peak reverse repetitive voltage is rated at 75 V.

It is suitable for power management, signal processing, and electronic control applications in various electronic systems.

The maximum forward voltage is rated at 1.25 V.

This diode is manufactured in China.

This model is designed for surface mounting on printed circuit boards (PCBs).

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