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Nexperia Silicon Junction Switching Diode Single 400 mA 250 V 3-Pin SOT-23 BAS21,215

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BAS21,215
Width 1.4mm
Mount Type Surface
Series BAS21
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 1.7A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 400mA
Maximum Peak Reverse Repetitive Voltage Vrrm 250V
onsemi Switching Diode, Single, 200 mA, 3-Pin 250 V SOT-23 BAS21LT1GBrand onsemi
Nexperia Switching Diode, 3-Pin SOT-23 (TO-236AB) BAS21,215Brand Nexperia

Key Features

  • Supports customized high-density circuit designs.
  • Low-leakage and high-voltage types available for enhanced efficiency.
  • Compact 3-pin SOT-23 surface-mount package supports space-saving PCB layouts.
  • Maximum power dissipation of 250 mW ensures durability under load.
  • High switching speed with a peak reverse recovery time of 50 ns.
  • Operates in a temperature range from -65°C to 150°C for robust performance.
  • Maximum forward voltage of 1.25 V for efficient conduction.
  • Peak non-repetitive forward surge current of 1.7 A withstands transient conditions.

Product Description

Nexperia BAS21,215 Silicon Junction Switching Diode is a high-performance discrete semiconductor diode designed for electronic switching applications. Featuring a single diode configuration with a maximum forward current of 400 mA and a maximum peak reverse voltage of 250 V, this diode supports reliable operation in compact and high-density circuit designs.

The diode is offered in a 3-pin SOT-23 surface-mount package measuring 3 mm in length, 1.4 mm in width, and 1 mm in height, allowing for efficient PCB space utilization. It dissipates a maximum power of 250 mW and features a fast peak reverse recovery time of 50 ns, ensuring high-speed switching capabilities essential for power electronics and signal processing applications.

Operating temperature ranges from −65°C to 150°C, making it suitable for environments requiring wide thermal tolerance. The maximum forward voltage is specified as 1.25 V, and it can endure peak non-repetitive forward surge currents up to 1.7 A, providing robustness against voltage spikes.

This diode is ideal for industrial, consumer electronics, telecommunications, and automotive applications where space savings and rapid switching are crucial. It is compliant with necessary semiconductor manufacturing standards while not carrying automotive certifications.

Supports customized high-density circuit designs. Low leakage current for improved power efficiency. Compact SOT-23 package for surface mounting. Fast switching speeds for advanced electronic circuits. Wide operating temperature range from −65°C to 150°C.

Robust peak surge current handling capacity. Low forward voltage drop for energy savings. Suitable for a broad range of industrial and commercial applications. Explore our extensive selection of Switching Diodes and semiconductor components to suit diverse electronic design requirements on EnvMart.

Nexperia Silicon Junction Switching Diode Single 400 mA 250 V 3-Pin SOT-23 BAS21,215
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Frequently Asked Questions

The maximum forward current rating of this model is 400 mA.

This diode has a maximum peak reverse voltage of 250 V.

The diode is packaged in a SOT-23 surface-mount package, measuring 3 mm in length, 1.4 mm in width, and 1 mm in height.

It can withstand a peak non-repetitive forward surge current of 1.7 A.

The maximum power dissipation is 250 mW.

It operates within a temperature range from -65°C to 150°C.

The peak reverse recovery time is 50 ns.

The maximum forward voltage drop is specified as 1.25 V.

This model has a 3-pin configuration.

It is a silicon junction switching diode.

This diode is suitable for industrial, consumer electronics, telecommunications, and automotive applications.

The country of origin for this diode is India.

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