onsemi MMUN2133LT1G is a PNP digital transistor designed for surface mount applications featuring a 3-pin SOT-23 package. It supports a maximum collector emitter voltage of 50 V and a continuous collector current up to 100 mA, making it ideal for low power switching in electronic circuits.
Equipped with integrated bias resistors, this digital transistor simplifies circuit design by allowing direct digital driving without external resistors. It delivers a minimum DC current gain of 80, providing reliable amplification and switching characteristics.
The transistor's maximum power dissipation is rated at 400 mW and it operates safely up to 150°C, making it suitable for automotive and industrial environments. It adheres to stringent standards including RoHS, Pb-Free compliance, and the automotive AEC-Q101 standard, ensuring quality and environmental safety.
Its compact dimensions (3.04 mm length, 1.4 mm width, 1.11 mm height) enable high-density board layouts for modern electronics. The transistor’s maximum collector emitter saturation voltage of 0.25 V ensures efficient switching with minimal power loss.
This transistor is widely used in industrial, automotive, and consumer electronics for switching, amplification, and digital logic interfacing applications. This transistor comes in a compact SOT-23 package with 3 pins for surface mounting.
It features a minimum DC current gain (hFE) of 80 for efficient switching applications. The maximum power dissipation rating is 400 mW, suitable for low power digital circuits. It supports a maximum operating temperature of 150°C ensuring reliable performance in various environments.
The device complies with RoHS and Pb-Free standards and meets the automotive AEC-Q101 standard. Its small dimensions (3.04 mm length, 1.4 mm width, 1.11 mm height) allow for compact PCB designs. The transistor has a maximum collector emitter saturation voltage (VceSAT) of 0.25 V, enabling efficient switching with low losses.
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