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onsemi Digital Transistor Dual Resistor NPN + PNP 50 V 100 mA Surface Mount SOT-363 6-Pin MUN5312DW1T1G

Category Digital Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Model MUN5312DW1T1G
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363 (SC-88)
Standards/Approvals Pb-Free, RoHS
Pin Count 6
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN + PNP
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Transistor Configuration Isolated

Key Features

  • This device features a maximum continuous collector current of 100 mA suitable for various switching applications.
  • The transistor voltage ratings include a maximum collector base voltage of 50 V and a collector emitter saturation voltage of 0.25 V.
  • A minimum DC current gain (hFE) of 60 ensures reliable amplification performance.
  • It is a 6-pin isolated transistor configuration that supports both NPN and PNP polarities.
  • The transistor operates at a maximum temperature of 150°C, with compliance to automotive AEC-Q101 standards.
  • The compact SOT-363 surface mount package facilitates high-density PCB designs.
  • This transistor is Pb-Free and RoHS compliant, supporting environmentally conscious manufacturing.

Product Description

The onsemi MUN5312DW1T1G is a digital transistor featuring dual resistor-equipped NPN and PNP bipolar transistors integrated into a single 6-pin SOT-363 (SC-88) surface-mount package. Designed for robust switching applications, it supports a maximum collector emitter voltage of 50 V and a continuous collector current of 100 mA. The device's isolated transistor configuration simplifies interfacing with digital control signals while ensuring electrical isolation.

This dual resistor digital transistor includes integrated bias resistors, enabling direct driving from digital outputs without the need for external resistors. The transistor exhibits a collector emitter saturation voltage as low as 0.25 V and a minimum DC gain of 60, providing efficient switching performance with reduced power dissipation.

Capable of operating up to 150°C, the MUN5312DW1T1G complies with automotive AEC-Q101 qualification standards, making it suitable for automotive and industrial applications requiring reliability under harsh environments. It is fully Pb-Free and RoHS compliant, aligning with modern manufacturing and environmental requirements.

Applications include general-purpose switching, driver circuits, digital logic interfacing, and compact surface-mount device designs where space is constrained. The SOT-363 package supports high-density PCB assembly processes favored in consumer electronics, automotive electronics, and industrial control systems.

This device features a maximum continuous collector current of 100 mA suitable for various switching applications. The transistor voltage ratings include a maximum collector base voltage of 50 V and a collector emitter saturation voltage of 0.25 V.

A minimum DC current gain (hFE) of 60 ensures reliable amplification performance. It is a 6-pin isolated transistor configuration that supports both NPN and PNP polarities. The transistor operates at a maximum temperature of 150°C, with compliance to automotive AEC-Q101 standards.

The compact SOT-363 surface mount package facilitates high-density PCB designs. This transistor is Pb-Free and RoHS compliant, supporting environmentally conscious manufacturing.

Explore the comprehensive onsemi Digital Transistors and other discrete semiconductors at EnvMart for industrial, automotive, and consumer electronics projects requiring reliable digital switching solutions.

onsemi Digital Transistor Dual Resistor NPN + PNP 50 V 100 mA Surface Mount SOT-363 6-Pin MUN5312DW1T1G
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