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STMicroelectronics NPN Power Transistor, 1 A Collector Current, 60 V Collector-Emitter Voltage, TO-220 Package TIP29A
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 28.9mm |
| Length | 10.53mm |
| Model | TIP29A |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 30W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
Key Features
- Configured as a single bipolar NPN transistor suitable for through-hole mounting.
- Housed in a durable TO-220 package for effective heat dissipation.
- Maximum collector current is 1 ampere with a collector-emitter voltage rating of 60 volts.
- Power dissipation capability up to 30 watts under normal operating conditions.
- Operates reliably within a temperature range of 0° to 150°C.
- Minimum DC current gain (hFE) of 15 ensures adequate amplification.
- Three-pin configuration providing easy integration into circuits.
- Maximum emitter-base voltage of 5 volts for device protection.
Product Description
STMicroelectronics TIP29A is an NPN bipolar power transistor engineered for a wide range of electronic applications including amplification and switching. This device features a maximum DC collector current of 1 ampere and a collector-emitter voltage rating of 60 volts, making it suitable for medium power requirements.
The transistor is housed in a TO-220 package designed for through-hole mounting, providing efficient heat dissipation and mechanical stability. With a power dissipation rating of 30 watts, it withstands considerable thermal loads with proper cooling.
Operating temperature ranges from 0° to 150°C, ensuring reliable operation in diverse ambient environments. The minimum DC current gain (hFE) of 15 signifies efficient current amplification capabilities. The transistor’s three-pin configuration simplifies its implementation in circuit designs.
Physical dimensions include a height of 28.9 mm, a length of 10.53 mm, and a width of 4.83 mm, facilitating compatibility with standard mounting layouts. The device does not hold specific automotive or industry approvals but meets essential semiconductor performance standards.
Configured as a single bipolar NPN transistor suited for diverse applications. Maximum collector current of 1 ampere ensures handling of moderate power loads. Collector-emitter voltage capacity of 60 volts allows operation in various circuits.
TO-220 packaging supports optimal thermal management and mounting flexibility. Robust power dissipation of 30 watts with adequate heat sinking. Wide operating temperature from 0° to 150°C offers environmental versatility.
Minimum DC current gain of 15 for reliable amplification. Three pins for ease of installation and wiring. Compact physical dimensions compatible with standard applications. Suitable for industrial, electronic, and power control systems.
This transistor is widely used in industrial electronics, power supply regulation, and general purpose amplification circuits. It supports construction, manufacturing, and electronics laboratory needs. For comprehensive product selection, browse the discrete semiconductors and power transistor categories on EnvMart.
Explore more products in our Power Transistors category.
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Frequently Asked Questions
The maximum collector current for the TIP29A transistor is 1 ampere.
The collector-emitter voltage rating of the TIP29A is 60 volts.
This transistor has a power dissipation capability of up to 30 watts under normal operating conditions.
The operating temperature range for the TIP29A is from 0° to 150°C.
The TIP29A supports through-hole mounting, making it suitable for various circuit designs.
The physical dimensions of the TIP29A are 28.9 mm in height, 10.53 mm in length, and 4.83 mm in width.
The minimum DC current gain (hFE) for the TIP29A is 15, ensuring adequate amplification.
The TIP29A has a three-pin configuration, facilitating easy integration into circuits.
The maximum emitter-base voltage (VEBO) for the TIP29A is 5 volts.
The TIP29A is suitable for industrial electronics, power supply regulation, and general purpose amplification circuits.
The TIP29A comes in a TO-220 package type, designed for effective heat dissipation.
The TIP29A is configured as a single bipolar NPN transistor.
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