Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

onsemi Power Bipolar NPN Transistor 20A Collector Current 80V Collector Emitter Voltage 50W TO-263 MJB44H11G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.83mm
Length 11.05mm
Model MJB44H11G
Width 10.29mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 80V dc
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc 20A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Supports maximum DC collector current of 20 amps.
  • Capable of withstanding collector emitter voltage up to 80 volts DC.
  • Surface mount 4-pin TO-263 package designed for easy PCB integration.
  • Maximum power dissipation rated at 50 watts for high efficiency operation.
  • NPN polarity transistor suitable for various amplification and switching circuits.
  • Minimum DC current gain (hFE) of 60 ensures reliable transistor amplification.
  • Operating temperature range spans from -55°C to 150°C for versatility in environments.
  • Meets automotive standard AEC-Q101 for quality and reliability in automotive electronics.

Product Description

onsemi MJB44H11G is a high-power bipolar NPN transistor designed for demanding applications that require efficient amplification and switching capabilities operating at collector currents up to 20 ampere and a maximum collector emitter voltage of 80 volts DC. This transistor features a 4-pin TO-263 surface mount package that facilitates compact and reliable PCB assembly in modern electronic devices.

Its maximum power dissipation is 50 watts, making it suitable for power management, switching regulators, and output driver circuits in industrial, automotive, and consumer electronics. The device operates reliably over a wide temperature range from -55°C to 150°C, meeting the strict requirements of automotive industry standards such as AEC-Q101.

With a minimum DC current gain (hFE) of 60, the MJB44H11G transistor ensures effective signal amplification while maintaining low collector-emitter saturation voltage which aids in reducing power losses during switching. The transistor’s compact form factor with dimensions of 11.05 mm in length, 10.29 mm width, and 4.83 mm height allows for space-efficient integration in dense circuitry.

Supports maximum DC collector current of 20 amps. Maximum collector emitter voltage rating is 80 volts DC. Packaged in a 4-pin TO-263 surface mount casing. Capable of dissipating 50 watts power. Configured as a single NPN transistor.

Minimum DC current gain (hFE) is 60 for reliable amplification. Operating temperature range from -55°C to +150°C. Compliant with automotive AEC-Q101 quality standards. Compact size suitable for modern PCB designs.

This power transistor is ideal for applications including switching regulators, converters, power amplifiers, and automotive electronics where robustness, reliability, and thermal stability are paramount. Engineers and designers can leverage this transistor’s performance to enhance energy efficiency and reduce thermal stress in their circuits.

Explore the complete range of Power Transistors on EnvMart, featuring components optimized for diverse industrial, automotive, and electronics manufacturing needs.

onsemi Power Bipolar NPN Transistor 20A Collector Current 80V Collector Emitter Voltage 50W TO-263 MJB44H11G
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The MJB44H11G transistor supports a maximum DC collector current of 20 amps.

This model has a maximum collector-emitter voltage rating of 80 volts DC.

It is capable of dissipating a maximum power of 50 watts.

This transistor is packaged in a 4-pin TO-263 surface mount configuration.

The operating temperature range spans from -55°C to 150°C.

It has a minimum DC current gain (hFE) of 60, ensuring reliable amplification.

The MJB44H11G meets the automotive standard AEC-Q101 for quality and reliability.

The dimensions are 11.05 mm in length, 10.29 mm in width, and 4.83 mm in height.

It is a single NPN bipolar transistor suitable for amplification and switching applications.

The maximum emitter-base voltage (VEBO) is rated at 5 volts DC.

This transistor is ideal for applications including switching regulators, converters, and power amplifiers in automotive electronics.

The maximum transition frequency (ft) for this transistor is 1 MHz.

Related Products

$1.02
$0.99 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$1.02
$0.99
Tax included