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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 11.05mm |
| Model | MJB44H11G |
| Width | 10.29mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 80V dc |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 20A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi MJB44H11G is a high-power bipolar NPN transistor designed for demanding applications that require efficient amplification and switching capabilities operating at collector currents up to 20 ampere and a maximum collector emitter voltage of 80 volts DC. This transistor features a 4-pin TO-263 surface mount package that facilitates compact and reliable PCB assembly in modern electronic devices.
Its maximum power dissipation is 50 watts, making it suitable for power management, switching regulators, and output driver circuits in industrial, automotive, and consumer electronics. The device operates reliably over a wide temperature range from -55°C to 150°C, meeting the strict requirements of automotive industry standards such as AEC-Q101.
With a minimum DC current gain (hFE) of 60, the MJB44H11G transistor ensures effective signal amplification while maintaining low collector-emitter saturation voltage which aids in reducing power losses during switching. The transistor’s compact form factor with dimensions of 11.05 mm in length, 10.29 mm width, and 4.83 mm height allows for space-efficient integration in dense circuitry.
Supports maximum DC collector current of 20 amps. Maximum collector emitter voltage rating is 80 volts DC. Packaged in a 4-pin TO-263 surface mount casing. Capable of dissipating 50 watts power. Configured as a single NPN transistor.
Minimum DC current gain (hFE) is 60 for reliable amplification. Operating temperature range from -55°C to +150°C. Compliant with automotive AEC-Q101 quality standards. Compact size suitable for modern PCB designs.
This power transistor is ideal for applications including switching regulators, converters, power amplifiers, and automotive electronics where robustness, reliability, and thermal stability are paramount. Engineers and designers can leverage this transistor’s performance to enhance energy efficiency and reduce thermal stress in their circuits.
Explore the complete range of Power Transistors on EnvMart, featuring components optimized for diverse industrial, automotive, and electronics manufacturing needs.
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