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onsemi Power PNP Transistor 10 A 140 V 3-Pin TO-3P FJA4210OTU

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onsemi Power PNP Transistor 10 A 140 V 3-Pin TO-3P FJA4210OTU

Name: onsemi Power PNP Transistor 10 A 140 V 3-Pin TO-3P FJA4210OTU
Brand: onsemi
SKU: 242913
Price: 2.9 USD
Availability: InStock

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Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	40.4mm
Length	15.8mm
Model	FJA4210OTU
Width	5mm
Mount Type	Through Hole
Series	FJA4210
Maximum Operating Temperature	150°C
Package Type	TO-3P
Pin Count	3
Maximum Collector Emitter Voltage Vceo	140V
Minimum DC Current Gain hFE	50
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-6V
Maximum Collector Base Voltage VCBO	-200V
Maximum Power Dissipation Pd	100W
Maximum DC Collector Current Idc	10A
Transistor Configuration	Single
Maximum Transition Frequency ft	30MHz

Key Features

Designed for high reliability and superior thermal performance.
Maximum power dissipation of 100 watts for robust operation.
Through hole mount type suitable for various industrial circuits.
High maximum operating temperature up to 150°C enhances durability.
Maximum transition frequency of 30 MHz ensures efficient high-frequency switching.
Single transistor configuration with PNP polarity.
Minimum DC current gain (hFE) of 50 ensures adequate amplification.
Compatible with power applications requiring collector base voltage up to -200 V.

Product Description

onsemi FJA4210OTU is a power PNP transistor designed for robust industrial and power electronic applications. It supports a maximum DC collector current of 10 amperes and a maximum collector emitter voltage of 140 volts, packaged in a reliable 3-pin TO-3P configuration. This transistor features a single configuration with PNP polarity, suitable for a wide range of power switching and amplification tasks.

The device offers a maximum power dissipation of 100 watts, making it ideal for circuits that require high power handling capability. Its maximum operating temperature rating of 150°C ensures stable operation under demanding thermal conditions. With a maximum transition frequency of 30 MHz, it's capable of efficient switching in high-frequency environments.

The transistor's package dimensions include a height of 40.4 mm, length of 15.8 mm, and width of 5 mm, designed for easy integration into through hole mount setups. It allows operation with a maximum collector base voltage of -200 V and a maximum emitter base voltage of -6 V, providing flexibility in various circuit designs.

This product is widely utilized in industrial electronics, power supplies, and other electronic devices that require dependable and high-performance transistors. Its robust construction and reliable specifications meet exacting power transistor standards without automotive certification.

Designed for high reliability and superior thermal performance. Maximum power dissipation of 100 watts for robust operation. Through hole mount type suitable for various industrial circuits. High maximum operating temperature up to 150°C enhances durability.

Maximum transition frequency of 30 MHz ensures efficient high-frequency switching. Single transistor configuration with PNP polarity. Minimum DC current gain (hFE) of 50 ensures adequate amplification. Compact package dimensions: height 40.4 mm, length 15.8 mm, width 5 mm.

Compatible with power applications requiring collector base voltage up to -200 V. Ideal for industrial, power supply, and electronic applications demanding high power and current ratings. Explore more power transistor solutions and semiconductors at EnvMart for your next electronics design and manufacturing needs.

Explore more products in our Power Transistors category.

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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is 140 volts, allowing it to handle significant voltage levels in various applications.

This transistor supports a maximum DC collector current of 10 amperes, making it suitable for high current applications.

It has a maximum power dissipation of 100 watts, which enables robust operation in demanding circuits.

The package dimensions are 40.4 mm in height, 15.8 mm in length, and 5 mm in width, designed for through hole mounting.

The maximum operating temperature is rated at 150°C, ensuring stable performance under high thermal conditions.

This model has a minimum DC current gain (hFE) of 50, which ensures adequate amplification for various applications.

It utilizes a through hole mount type, making it compatible with various industrial circuit designs.

The maximum transition frequency for this transistor is 30 MHz, allowing for efficient high-frequency switching applications.

This model features a PNP polarity, suitable for specific circuit configurations that require this type.

The maximum collector base voltage (VCBO) is -200 volts, providing flexibility in various circuit designs.

It is widely utilized in industrial electronics, power supplies, and other electronic devices that require high performance and power handling capabilities.

This model has a pin count of 3, corresponding to its TO-3P package configuration.