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onsemi NPN Power Transistor 16 A 250 V 3-Pin TO-247 MJW21194G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.65mm
Length 16.26mm
Model MJW21194G
Width 5.3mm
Mount Type Through Hole
Series MJW21194
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 8
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 400V dc
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc 16A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor supports a maximum DC collector current of 16 amperes.
  • Maximum collector-emitter voltage rating is 250 volts ensuring robust performance.
  • The device has a maximum power dissipation capacity of 200 watts for efficient thermal management.
  • It features an NPN transistor polarity with a minimum DC current gain of 8.
  • Operates within a wide temperature range from -65°C to 150°C.
  • Constructed with a through-hole mount type providing reliable mechanical stability.
  • Pin count is 3 suitable for standard electronic configurations.
  • Package dimensions include length 16.26 mm, width 5.3 mm, and height 1.65 mm.

Product Description

onsemi MJW21194G is a single NPN power transistor specifically engineered for high power electronic circuits. Housed in a 3-pin TO-247 package, this transistor supports a maximum DC collector current of 16 A and can sustain collector-emitter voltages of up to 250 V, making it ideal for power switching applications and amplification tasks in industrial and commercial electronic systems.

With a high power dissipation of 200 W, the transistor ensures effective heat management when used in demanding operational conditions. The device operates reliably between -65°C and 150°C, covering a wide temperature range required in automotive and industrial environments.

Its through-hole mount type offers sturdy assembly on printed circuit boards and compatibility with standard socket designs. The transistor's high collector-base voltage rating of 400 V DC and an emitter base voltage limit of 5 V provide increased robustness under high voltage stress conditions.

The electrical characteristics include a minimum DC current gain (hFE) of 8 and a maximum transition frequency of 1 MHz, making MJW21194G suitable for switching and amplifier circuits up to the specified frequency range.

With precise dimensional specifications of length 16.26 mm, width 5.3 mm, and height 1.65 mm, this power transistor fits efficiently into compact power electronics modules. This device is essential for industrial power control, motor drives, and power supply circuits.

The MJW21194 series by onsemi is known for durable and reliable performance in discrete semiconductor applications. Packaging in a tube ensures protection and readiness for automated insertion into manufacturing equipment.

Improve your electronic design and production efficiency with the reliable and high-performance MJW21194G transistor from onsemi. Explore EnvMart's vast catalog for more Power Transistors and semiconductor devices by onsemi and other leading brands to suit your project needs.

onsemi NPN Power Transistor 16 A 250 V 3-Pin TO-247 MJW21194G
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Frequently Asked Questions

The maximum DC collector current for this model is 16 amperes.

It has a maximum collector-emitter voltage rating of 250 volts.

The maximum power dissipation capacity is 200 watts, allowing for efficient thermal management.

This model operates within a wide temperature range from -65°C to 150°C.

It features a 3-pin configuration and is designed for through-hole mounting.

The minimum DC current gain (hFE) for the MJW21194G is 8.

The dimensions are 16.26 mm in length, 5.3 mm in width, and 1.65 mm in height.

The maximum transition frequency is 1 MHz, suitable for switching and amplifier circuits.

The maximum emitter-base voltage (VEBO) is 5 volts.

It has a maximum collector-base voltage rating of 400 V DC.

This transistor is suitable for power switching applications and amplification tasks in industrial and commercial electronic systems.

The country of origin for this model is India.

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