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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 20.35mm |
| Length | 15.2mm |
| Model | TIP36CG |
| Mount Type | Through Hole |
| Series | TIP35A |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-93 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 100V dc |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Collector Cut-off Current | 1mA |
| Maximum Power Dissipation Pd | 125W |
| onsemi TIP36CG 1 Transistor PNP, 25 A 100 V dc HFE | 15, 3-Pin SOT-93 |
The onsemi TIP36CG is a high-performance bipolar power transistor designed primarily for general purpose power amplifier and switching applications in electronic circuits. Featuring a maximum continuous collector current of 25 A and a collector emitter voltage rating of 100 V dc, it is well suited for demanding power management tasks in industrial, automotive, and manufacturing environments.
This PNP transistor is housed in a SOT-93 package with a through hole mount style and three pins, facilitating easy integration in PCB designs requiring robust and reliable power transistors.
The device offers a minimum DC current gain (hFE) of 15, which ensures excellent amplification capabilities with low leakage current, enhancing circuit efficiency and stability.
Thermal management is optimized with a maximum power dissipation of 125 W, enabling use in applications with substantial power requirements while maintaining safe operating temperatures.
Operating temperature range from -65°C to 150°C allows deployment in various environments including industrial and automotive systems where temperature extremes are common.
Additional electrical parameters include a maximum emitter base voltage of 5 V dc, maximum collector base voltage of 100 V dc, and a maximum collector emitter saturation voltage of 1.8 V, which together ensure stable transistor operation and minimal power losses during switching.
The physical dimensions of the transistor are 20.35 mm in height and 15.2 mm in length, useful information for system designers considering space constraints and heatsinking.
The TIP36CG belongs to the TIP35A series, noted for complementary transistor pairs, making it a valuable component choice for power amplification circuits needing complementary PNP transistors.
This transistor is manufactured in China and is supplied new, guaranteeing performance consistency and reliability. Maximum continuous collector current of 25 amperes for high power applications. Robust 100 V collector emitter voltage rating ensuring reliable performance.
SOT-93 package with through hole mount for secure PCB assembly. Minimum DC current gain of 15 providing strong amplification. High power dissipation rating of 125 watts supports demanding use cases. Wide operating temperature range from -65°C to 150°C.
Low leakage current and maximum saturation voltage of 1.8 V ensures efficient switching. Compact physical dimensions: 20.35 mm height and 15.2 mm length. Part of TIP35A series supporting complementary transistor configurations.
New condition and quality assured manufacturing origin in China. This product is ideal for industrial, automotive, laboratory, manufacturing, and electronic power management applications requiring reliable and efficient PNP Power Transistors.
Explore more power transistor options and semiconductor components on EnvMart to meet diverse electronic design needs.
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