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onsemi Bipolar Power Transistor PNP 25 A 100 V dc 125 W Power Dissipation Through Hole SOT-93 TIP36CG

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 20.35mm
Length 15.2mm
Model TIP36CG
Mount Type Through Hole
Series TIP35A
Maximum Operating Temperature 150°C
Package Type SOT-93
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 25A
Maximum Collector Emitter Voltage Vceo 100V dc
Number of Elements per Chip 1
Minimum DC Current Gain hFE 15
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V
Maximum Collector Base Voltage VCBO 100V dc
Maximum Collector Cut-off Current 1mA
Maximum Power Dissipation Pd 125W
onsemi TIP36CG 1 Transistor PNP, 25 A 100 V dc HFE 15, 3-Pin SOT-93

Key Features

  • Maximum continuous collector current of 25 amperes for high power handling.
  • Collector emitter voltage rating of 100 volts dc ensures robust voltage tolerance.
  • Package type is SOT-93 with through hole mount featuring 3 pins.
  • Minimum DC current gain hFE of 15 with excellent current amplification.
  • Maximum power dissipation rating of 125 watts for efficient thermal performance.
  • Operating temperature range from -65°C to 150°C for varied environments.
  • Transistor polarity is PNP, suitable for complementary configurations.
  • Maximum collector emitter saturation voltage of 1.8 volts for low power loss switching.

Product Description

The onsemi TIP36CG is a high-performance bipolar power transistor designed primarily for general purpose power amplifier and switching applications in electronic circuits. Featuring a maximum continuous collector current of 25 A and a collector emitter voltage rating of 100 V dc, it is well suited for demanding power management tasks in industrial, automotive, and manufacturing environments.

This PNP transistor is housed in a SOT-93 package with a through hole mount style and three pins, facilitating easy integration in PCB designs requiring robust and reliable power transistors.

The device offers a minimum DC current gain (hFE) of 15, which ensures excellent amplification capabilities with low leakage current, enhancing circuit efficiency and stability.

Thermal management is optimized with a maximum power dissipation of 125 W, enabling use in applications with substantial power requirements while maintaining safe operating temperatures.

Operating temperature range from -65°C to 150°C allows deployment in various environments including industrial and automotive systems where temperature extremes are common.

Additional electrical parameters include a maximum emitter base voltage of 5 V dc, maximum collector base voltage of 100 V dc, and a maximum collector emitter saturation voltage of 1.8 V, which together ensure stable transistor operation and minimal power losses during switching.

The physical dimensions of the transistor are 20.35 mm in height and 15.2 mm in length, useful information for system designers considering space constraints and heatsinking.

The TIP36CG belongs to the TIP35A series, noted for complementary transistor pairs, making it a valuable component choice for power amplification circuits needing complementary PNP transistors.

This transistor is manufactured in China and is supplied new, guaranteeing performance consistency and reliability. Maximum continuous collector current of 25 amperes for high power applications. Robust 100 V collector emitter voltage rating ensuring reliable performance.

SOT-93 package with through hole mount for secure PCB assembly. Minimum DC current gain of 15 providing strong amplification. High power dissipation rating of 125 watts supports demanding use cases. Wide operating temperature range from -65°C to 150°C.

Low leakage current and maximum saturation voltage of 1.8 V ensures efficient switching. Compact physical dimensions: 20.35 mm height and 15.2 mm length. Part of TIP35A series supporting complementary transistor configurations.

New condition and quality assured manufacturing origin in China. This product is ideal for industrial, automotive, laboratory, manufacturing, and electronic power management applications requiring reliable and efficient PNP Power Transistors.

Explore more power transistor options and semiconductor components on EnvMart to meet diverse electronic design needs.

onsemi Bipolar Power Transistor PNP 25 A 100 V dc 125 W Power Dissipation Through Hole SOT-93 TIP36CG
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Frequently Asked Questions

The maximum continuous collector current for this model is 25 amperes, making it suitable for high power applications.

The collector emitter voltage rating is 100 volts DC, ensuring robust voltage tolerance for various applications.

This transistor is housed in a SOT-93 package with a through hole mount, featuring three pins for easy integration.

The minimum DC current gain (hFE) for this model is 15, providing strong amplification capabilities.

It has a maximum power dissipation rating of 125 watts, which supports efficient thermal performance.

The operating temperature range is from -65°C to 150°C, allowing it to function in various environmental conditions.

The maximum collector emitter saturation voltage is 1.8 volts, which helps minimize power loss during switching.

The dimensions are 20.35 mm in height and 15.2 mm in length, relevant for PCB design considerations.

The transistor polarity is PNP, making it suitable for complementary configurations in circuits.

The maximum emitter base voltage is 5 volts DC, ensuring stable operation in circuit applications.

This product is manufactured in China, ensuring consistent quality and performance.

It belongs to the TIP35A series, which is noted for complementary transistor pairs used in power amplification circuits.

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