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onsemi Power NPN Bipolar Transistor, 3 A Collector Current, 60 V Collector Emitter Voltage, TO-220 Package KSD2012GTU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 25.55mm |
| Length | 10.16mm |
| Model | KSD2012GTU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 25W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
| Diodes Inc APT13005TF-G1 Transistor, 4 A NPN, 700 V, 3-Pin TO-220FBrand | DiodesZetex |
Key Features
- Maximum DC collector current of 3 amperes.
- Collector emitter voltage rated at 60 volts.
- Minimum DC current gain (hFE) of 20.
- Maximum power dissipation of 25 watts.
- 3-pin through hole TO-220 package for efficient mounting.
- Transistor polarity is NPN, single transistor configuration.
- Operating temperature up to 150 degrees Celsius.
- Maximum emitter base voltage of 7 volts.
Product Description
The onsemi KSD2012GTU is a power NPN bipolar junction transistor (BJT) designed for various electronic applications requiring reliable switching and amplification capabilities. It is configured as a single transistor with a maximum DC collector current rating of 3 amperes and a collector emitter voltage of up to 60 volts, making it suitable for medium power applications.
This transistor comes in a standard 3-pin TO-220 through hole package, allowing for straightforward PCB mounting and effective heat dissipation in industrial, electronic manufacturing, and power supply circuits.
Key electrical characteristics include a minimum DC current gain (hFE) of 20 and maximum power dissipation of 25 watts. The device supports continuous operation at ambient temperatures up to 150°C, ensuring robustness in demanding environments.
Physical dimensions measure 10.16 mm in length, 25.55 mm in height, and 4.7 mm in width, contributing to its compact but sturdy form factor.
Typical applications span power amplification, switching circuits in industrial control systems, power supply units, and general purpose transistor roles within discrete semiconductor assemblies.
Maximum DC collector current of 3 amperes. Collector emitter voltage of 60 volts. Minimum DC current gain (hFE) of 20. Power dissipation rating of 25 watts. 3-pin TO-220 through hole package type. Transistor polarity: NPN.
Operating temperature up to 150°C. Maximum emitter base voltage of 7 volts. Compact physical dimensions for efficient PCB layout. No automotive or special approvals.
This transistor is widely used in industrial electronics, power management, and electronic device manufacturing sectors. It offers a balanced performance profile for medium power switching and amplification tasks.
Explore onsemi and other semiconductor components at EnvMart for quality power transistor solutions.
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Frequently Asked Questions
The maximum DC collector current for this model is 3 amperes.
It has a collector-emitter voltage rating of 60 volts.
The maximum power dissipation for the KSD2012GTU is 25 watts.
The minimum DC current gain (hFE) for this transistor is 20.
It comes in a 3-pin TO-220 through hole package, which facilitates efficient mounting.
The maximum operating temperature is 150 degrees Celsius.
The dimensions are 10.16 mm in length, 25.55 mm in height, and 4.7 mm in width.
This model has an NPN transistor polarity.
The maximum emitter-base voltage is 7 volts.
It is suitable for power amplification, switching circuits in industrial control systems, and power supply units.
The KSD2012GTU is configured as a single transistor.
The country of origin for this model is India.
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