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onsemi Transistor NPN Power 15A 250V DC 200W TO-3P Through Hole NJW3281G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.1mm |
| Length | 15.8mm |
| Model | NJW3281G |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V dc |
| Minimum DC Current Gain hFE | 45 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V dc |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Rated for a maximum DC collector current of 15 amperes.
- Supports collector-emitter voltage up to 250 volts DC.
- Maximum power dissipation of 200 watts ensures high performance.
- Featuring NPN transistor polarity with single transistor configuration.
- Through-hole mount type with durable TO-3P package.
- Minimum current gain (hFE) of 45 for efficient amplification.
- Operating temperature range from -65°C to 150°C suitable for industrial environments.
- Has three pins and dimensions of 20.1mm height, 15.8mm length, and 5mm width.
Product Description
onsemi NJW3281G is a high-power NPN transistor designed to handle a continuous collector current of 15 amperes and a collector-emitter voltage of 250 V DC. Housed in a TO-3P package for through-hole mounting, it is optimized for power applications requiring efficient heat dissipation and robust electrical performance.
This transistor supports a maximum power dissipation of 200 watts and a minimum DC current gain (hFE) of 45, making it suitable for amplification and switching tasks in power management circuits. Its operating temperature range from -65°C to 150°C allows for reliable operation in harsh industrial and commercial environments.
The device features a maximum transition frequency of 1 MHz, making it suitable for switch mode power supplies and medium frequency amplifier applications. It offers a maximum collector-base voltage of 250 V and maximum emitter-base voltage of 5 V, providing ample voltage tolerance.
The physical dimensions of 20.1 mm height, 15.8 mm length, and 5 mm width in a 3-pin layout facilitate easy integration into PCB designs with through-hole mounting requirements.
Ideal for use in industrial electronic components, power & connectors modules, and bipolar transistor applications, this onsemi transistor meets quality standards required in demanding power electronics and control systems.
Rated for 15A collector current and 250 V DC collector-emitter voltage. TO-3P package supports effective heat dissipation and mounting. High power dissipation capacity of 200W for demanding tasks. NPN polarity with single transistor configuration for typical switching applications.
Wide operating temperature range for robust usage. Three-pin design compatible with through-hole mounting setups. Applicable for industrial, laboratory, construction, and HVAC power electronics.
This transistor is part of onsemi’s range of bipolar transistors engineered for power and switching applications. EnvMart offers this product for advanced electronic component assemblies and repairs, enabling industrial and commercial technology upgrades.
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Frequently Asked Questions
The NJW3281G transistor is rated for a maximum DC collector current of 15 amperes.
It supports a collector-emitter voltage of up to 250 volts DC.
This transistor has a maximum power dissipation capacity of 200 watts.
It features a single transistor configuration with NPN polarity.
The NJW3281G has dimensions of 20.1 mm in height, 15.8 mm in length, and 5 mm in width.
It operates within a temperature range from -65°C to 150°C.
The minimum DC current gain (hFE) for the NJW3281G is 45.
This model is designed for through-hole mounting and comes in a TO-3P package.
It has a maximum transition frequency of 1 MHz, suitable for various applications.
The maximum collector-base voltage is 250 V, and the maximum emitter-base voltage is 5 V.
This transistor is applicable in power management circuits, industrial electronic components, and switching applications.
It features a 3-pin design, facilitating easy integration into PCB designs.
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