onsemi PNP Power Transistor, 16 A DC Collector Current, 150 V Maximum Collector Emitter Voltage, 36 W Power MJF15031G

onsemi MJF15031G is a high-performance PNP power transistor designed for demanding electronic applications requiring robust current handling and voltage capabilities. It features a maximum DC collector current rating of 16 A and a collector emitter voltage maximum of 150 V, making it suitable for power regulation and switching in various industrial and electronic devices.

The transistor is housed in a durable 3-Pin TO-220 package that supports effective heat dissipation with a power dissipation up to 36 W. Its through-hole mount type enables easy PCB integration and secure mechanical placement. The single transistor configuration and PNP polarity offer reliable operation under varying load conditions.

The device operates over a broad temperature range from -65°C to 150°C, ensuring functionality in harsh environmental conditions. It has a minimum DC current gain (hFE) of 20 and a transition frequency up to 10 MHz, making it suitable for moderate frequency power switching applications.

With precise electrical ratings including a collector base voltage of 150 V and an emitter base voltage of 5 V, the MJF15031G maintains electrical integrity and performance in power control circuits. The transistor’s compact dimensions (length 10.63 mm, width 4.9 mm, height 29.85 mm) facilitate its use in space-constrained designs.

Manufactured in the Republic of Korea, this device adheres to high quality and production standards, although it does not carry specific external certifications or automotive qualification. It is ideal for industrial electronics, power supplies, automation equipment, and general-purpose amplification and switching.

Designed for through-hole mounting applications. Single transistor configuration with PNP polarity. Maximum power dissipation of 36 watts ensures efficient heat management. Operates reliably between -65°C and 150°C. Collector base voltage rated at 150 V dc and emitter base voltage at 5 V.

Maximum transition frequency of 10 MHz suitable for power switching applications. Compact dimensions with length 10.63 mm, width 4.9 mm, and height 29.85 mm. Manufactured in the Republic of Korea ensuring quality standards.

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