onsemi Power PNP Transistor, -15 A Maximum DC Collector Current, -230 V Collector Emitter Voltage, 3-Pin TO-247 MJW1302AG

onsemi MJW1302AG is a high power PNP bipolar transistor housed in a TO-247 packaged 3-pin configuration. It supports a maximum DC collector current of -15 A and a collector emitter voltage up to -230 V, targeting demanding power amplification and switching applications. With a maximum power dissipation rating of 200 W, it offers reliable operation in power-intensive circuits.

The transistor features through-hole mount type and a single transistor configuration. It operates efficiently across a wide temperature range from -65°C minimum up to 150°C maximum, suitable for industrial and commercial electronic systems. The device exhibits a minimum DC current gain (hFE) of 12 and a transition frequency of 1 MHz, making it an ideal choice for linear amplification and audio frequency applications.

Designed for robust performance with low harmonic distortion, the MJW1302AG ensures high safe operation area with high current and voltage handling capabilities. Its complementary gain characteristics allow stable operation in high power audio amplifiers and disk head positioner circuits.

The transistor dimensions are approximately 41.91mm in height, 16.26mm in length, and 5.3mm in width, facilitating effective heat dissipation. This power transistor is suitable for use in electronic components, discrete semiconductor devices, and power management circuits within industrial, manufacturing, and electronic design automation environments.

This transistor offers -15 A maximum DC collector current and -230 V collector emitter voltage. Features TO-247 package for enhanced thermal performance and durability. Maximum power dissipation of 200 W supports demanding applications.

Operating temperature range from -65°C to 150°C ensures reliable use in various environments. Transition frequency of 1 MHz and minimum DC current gain of 12. Designed for power amplification, audio, and linear electronic applications.

Robust, high safe operating area for enhanced circuit protection. Manufactured in China with strict quality controls. Explore more electronic Power Transistors and semiconductors at EnvMart for industrial, electronic design, and manufacturing needs.