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onsemi PNP Transistor MJD210G, 5 A Collector Current, 25 V Collector Emitter Voltage, 4-Pin DPAK Surface Mount MJD210G

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onsemi PNP Transistor MJD210G, 5 A Collector Current, 25 V Collector Emitter Voltage, 4-Pin DPAK Surface Mount MJD210G

Name: onsemi PNP Transistor MJD210G, 5 A Collector Current, 25 V Collector Emitter Voltage, 4-Pin DPAK Surface Mount MJD210G
Brand: onsemi
SKU: 255586
Price: 0.36 USD
Availability: InStock

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Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin	Vietnam
Brand	onsemi
Height	2.38mm
Length	6.73mm
Model	MJD210G
Width	10.41mm
Mount Type	Surface
Series	MJD210
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-65°C
Pin Count	4
Maximum Collector Emitter Voltage Vceo	-25V
Minimum DC Current Gain hFE	10
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	8V dc
Maximum Collector Base Voltage VCBO	40V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	12.5W
Maximum DC Collector Current Idc	-5A
Transistor Configuration	Single
Maximum Transition Frequency ft	10MHz

Key Features

Maximum DC collector current of 5 amperes for robust power handling capacity.
Collector emitter voltage rating of 25 volts ensuring high voltage tolerance.
Surface mount TO-252 package type facilitating easy PCB integration.
Operating temperature range from -65°C to 150°C suitable for industrial environments.
Minimum DC current gain of 10 for efficient transistor amplification.
Maximum power dissipation of 12.5 watts for reliable thermal performance.
Automotive standard compliant with AEC-Q101 ensuring superior quality and reliability.
Compact dimensions with length 6.73 mm, width 10.41 mm, and height 2.38 mm for space-sensitive electronics.

Product Description

onsemi MJD210G PNP transistor is a robust and reliable power transistor designed with a 4-pin DPAK TO-252 surface mount package. Rated for a maximum DC collector current of 5 A and a collector emitter voltage of 25 V, it is well-suited for various industrial, electronic, and automotive applications requiring effective switching and amplification capabilities.

This transistor features a single transistor configuration with PNP polarity, supporting a maximum collector base voltage of 40 V dc and an emitter base voltage of 8 V dc. It offers a minimum DC current gain (hFE) of 10 and a maximum transition frequency of 10 MHz, ensuring efficient performance in analog circuits.

The device can operate reliably in extreme temperature ranges from -65°C up to 150°C, adding resilience for harsh environments. The compact TO-252 package with surface mount design allows easy PCB assembly and space-saving layouts.

Meeting the automotive standard AEC-Q101, this transistor assures quality and durability for automotive electronic systems and other demanding applications. The dimensions measure 6.73 mm in length, 10.41 mm in width, and 2.38 mm in height.

Maximum DC collector current of 5 amperes. Maximum collector emitter voltage of 25 volts. TO-252 package type for surface mounting. Operating temperature from -65°C to 150°C. Minimum DC current gain of 10. Maximum power dissipation of 12.5 watts.

Automotive standard AEC-Q101 compliance. Compact dimensions suitable for PCB integration.

This power transistor is ideal for industrial, automotive, electronic, and power management uses where reliable switching and amplification are necessary. Explore a wide range of bipolar and Power Transistors in our comprehensive electronics catalog at EnvMart.