onsemi NPN Power Transistor, 30 A, 90 V, TO-204 Package, Through Hole Mount, 2-Pin MJ802G

onsemi MJ802G is a NPN power transistor designed for high-current and high-voltage applications. Featuring a maximum DC collector current of 30 A and a collector emitter voltage rating of 90 V, this transistor delivers robust performance in power supply and amplification circuits. Encased in a TO-204 through-hole mount package, it is suitable for reliable installation on printed circuit boards.

The device supports a maximum power dissipation of 200 W, enabling efficient heat handling in demanding industrial and electronic environments. Its minimum DC current gain (hFE) of 25 ensures dependable amplification capabilities, while the maximum transition frequency of 2 MHz supports moderate frequency operations. This transistor configuration includes 2 pins in a single transistor format, simplifying circuit design.

With a wide operating temperature range from -65°C up to 200°C, the MJ802G transistor is well-suited for applications requiring durability in extreme conditions including industrial control, power management, and electronic switching.

The transistor's compact physical dimensions - length of 39.37 mm, width of 26.67 mm, and height of 20.7 mm - allow for space-efficient layouts. The NPN polarity supports a broad range of amplifier and switching tasks in both commercial and industrial settings.

Use cases for this transistor include industrial manufacturing equipment, power supply circuits, automotive electronics, and HVAC control systems. It is an essential component for engineers designing reliable, high-performance electronic solutions requiring Power Transistors with efficient thermal and electrical characteristics.

High current handling of 30 amperes for robust power applications. Collector emitter voltage rated at 90 volts for versatile circuit integration. TO-204 through-hole mount package ensures easy installation on PCBs. Maximum power dissipation of 200 watts for efficient thermal management.

Operating temperature range from -65°C to 200°C suitable for harsh environments. Single transistor configuration with 2-pin design for simplicity. Minimum DC current gain (hFE) of 25 ensures reliable amplification. Maximum transition frequency of 2 MHz for moderate switching performance.

Compact dimensions with length 39.37 mm, width 26.67 mm, and height 20.7 mm. NPN polarity designed for power amplification and switching applications. Browse the Electronics & Electricals category on EnvMart for more semiconductors and power transistor options from top brands like onsemi.