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onsemi PNP Transistor 100 mA, 65 V, 3-Pin SOT-723 Surface Mount BC856BM3T5G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.55mm
Length 1.25mm
Model BC856BM3T5G
Width 0.85mm
Mount Type Surface
Series BC856BM3
Maximum Operating Temperature 150°C
Package Type SOT-723
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 265mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • High DC collector current handling capability of 100 mA.
  • Collector-emitter voltage rating of 65 volts.
  • Surface mount SOT-723 package with compact 3-pin configuration.
  • Maximum power dissipation of 265 mW for reliable operation.
  • Minimum DC current gain (hFE) of 220 ensuring good amplification.
  • Operating temperature range from -55°C to 150°C, suitable for automotive applications.
  • Meets automotive standard AEC-Q101 for quality and reliability.
  • Maximum transition frequency of 100 MHz for high-speed switching.

Product Description

The onsemi BC856BM3T5G transistor is a general purpose PNP bipolar transistor designed for surface mount applications. This transistor supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 65 V, making it suitable for moderate power amplification and switching functions in electronic circuits.

Encased in a small 3-pin SOT-723 package, the BC856BM3T5G offers compactness ideal for modern PCB layouts. It has a maximum power dissipation of 265 mW, enabling it to efficiently handle continuous operation within specified limits.

This transistor demonstrates a minimum DC current gain (hFE) of 220, assuring good gain and performance in amplification circuits. It also supports a wide operating temperature range from -55°C to 150°C, fulfilling stringent automotive industry requirements and is certified to meet the AEC-Q101 automotive standard.

The device has a maximum transition frequency of 100 MHz, suitable for high-frequency switching applications. The dimensions are optimized for surface mount technology with a length of 1.25 mm, width of 0.85 mm, and height of 0.55 mm.

Typical uses include automotive electronics, power management, signal amplification, and other industrial electronic applications where reliable low power Bipolar Transistors are required.

High collector current of 100 mA. Voltage rating up to 65 V collector-emitter. Surface mount SOT-723 package with 3 pins. Power dissipation 265 mW. DC current gain hFE minimum 220. Wide operating temperature range -55 to 150°C.

Automotive standard AEC-Q101 compliance. Frequency up to 100 MHz. Compact dimensions supportive of modern PCB design. General purpose PNP transistor for automotive and industrial applications. Explore more transistors and semiconductor devices in EnvMart’s extensive catalog to find solutions tailored to your electronic design requirements.

onsemi PNP Transistor 100 mA, 65 V, 3-Pin SOT-723 Surface Mount BC856BM3T5G
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Frequently Asked Questions

The maximum DC collector current for the BC856BM3T5G transistor is 100 mA.

This transistor has a collector-emitter voltage rating of 65 V.

The maximum power dissipation for this model is 265 mW.

The minimum DC current gain (hFE) for the BC856BM3T5G is 220.

It operates within a temperature range of -55°C to 150°C.

The dimensions of the SOT-723 package are 1.25 mm in length, 0.85 mm in width, and 0.55 mm in height.

The maximum transition frequency of the BC856BM3T5G is 100 MHz.

Yes, it meets the AEC-Q101 automotive standard for quality and reliability.

It is a PNP bipolar transistor designed for surface mount applications.

The BC856BM3T5G has a pin count of 3.

The maximum emitter-base voltage (VEBO) is -5 V.

This model is suitable for automotive electronics, power management, and signal amplification.

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