Toshiba Bipolar Transistor 200 mA NPN 50 V 3-Pin SOT-23 TBC847B,LM(T

Toshiba TBC847B,LM(T bipolar transistor is a high-quality NPN silicon device designed primarily for low frequency amplifier applications. It supports a maximum DC collector current of 200 mA and can withstand collector-emitter voltages up to 50 V while dissipating up to 320 mW of power. Packaged in a compact SOT-23 surface mount format with 3 pins, it enables efficient space utilization on printed circuit boards.

Its electrical characteristics include a minimum DC current gain (hFE) of 200, collector-base voltage of 60 V, and emitter-base maximum voltage of 6 V, making it suitable for various discrete semiconductor roles. This transistor is engineered with a wide operating temperature range from -55°C to 150°C, ensuring operational stability under diverse thermal conditions.

The physical dimensions of the transistor are 2.9 mm in length, 2.4 mm in width, and 0.95 mm in height, fitting compact circuitry requirements. With its single transistor configuration and NPN polarity, it is widely applicable in industrial, laboratory, consumer electronics, and general electronic components manufacturing sectors.

The transistor does not carry specific automotive standards or approvals, emphasizing its role in standard discrete semiconductor applications. Designed for low frequency amplifier circuits. Compact SOT-23 package for surface mounting.

Robust electrical ratings ensure durability. Wide temperature operating range suited for industrial environments. Simple, single transistor configuration for ease of use.

This Toshiba bipolar transistor can be integrated into a wide range of electrical and electronic systems including industrial control devices, consumer electronics, and communications equipment. Explore further in EnvMart's comprehensive catalog of Bipolar Transistors for compatible components and accessories.