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onsemi PNP Bipolar Transistor, 1.5 A Collector Current, 80 V Collector-Emitter Voltage, 4-Pin SOT-223 Package BCP53T1G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin Malaysia
Brand onsemi
Height 1.75mm
Length 6.7mm
Model BCP53T1G
Width 3.7mm
Mount Type Surface
Series BCP53
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 100V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc -1.5A
Transistor Configuration Single
Maximum Transition Frequency ft 35MHz
High Current 1.5 Amps
Nexperia BCP53TX Transistor, -1 A PNP, -80 V, 3-Pin SOT-223Brand Nexperia

Key Features

  • This transistor is designed for general-purpose amplifier applications.
  • It features a maximum DC collector current of 1.5 Amps for high current operation.
  • The SOT-223 surface mount package enables wave or reflow soldering with thermal stress absorption.
  • The transistor has a maximum power dissipation of 1.5 watts ensuring reliable performance.
  • It operates over a wide temperature range from -65°C to 150°C, suitable for harsh environments.
  • The device offers a minimum DC current gain (hFE) of 40 for stable amplification.
  • Operating frequency reaches a maximum transition frequency of 35 MHz for moderate speed circuits.
  • Pin configuration includes 4 pins, facilitating easy PCB integration.

Product Description

The onsemi BCP53T1G is a PNP bipolar junction transistor designed primarily for general-purpose amplifier applications. Featuring a collector current rating of 1.5 A and a collector-emitter voltage of 80 V, this device is suited for low power, surface-mount applications. Housed in a 4-pin SOT-223 package, it ensures compact PCB layout and efficient thermal management during soldering operations.

This transistor supports a maximum power dissipation of 1.5 watts and operates reliably across a wide temperature range from -65°C up to 150°C, making it suitable for industrial, automotive, and commercial electronics environments. The minimum DC current gain of 40 allows for effective signal amplification in various circuits.

The 4-pin SOT-223 package includes formed leads that absorb thermal stress during both wave and reflow soldering processes, enhancing device reliability. The transistor is compliant with the automotive AEC-Q101 standard, indicating its robustness for automotive grade applications. Additionally, it is constructed without halogens and lead, adhering to modern environmental regulations.

Applications for the BCP53T1G include industrial control systems, power management devices, and signal amplification in automotive electronics. The NPN complement of this device is the BCP56 series, enabling complementary circuit designs.

This transistor is designed for general-purpose amplifier applications. High current rating of 1.5 Amps suitable for moderate power use cases. Compact 4-pin SOT-223 surface mount package for PCB efficiency. Maximum operating temperature of 150°C for high-temperature environments.

Minimum current gain of 40 supports reliable signal amplification. Maximum collector-emitter voltage of 80 V ensuring operational stability. Compliant with AEC-Q101 automotive standard for quality assurance. Lead-free and halogen-free construction aligns with environmental standards.

Wide operating temperature range from -65°C to 150°C accommodates industrial usage. Maximum transition frequency of 35 MHz suitable for moderate frequency electronics. Explore more Bipolar Transistors on EnvMart for your electronic and industrial component requirements.

onsemi PNP Bipolar Transistor, 1.5 A Collector Current, 80 V Collector-Emitter Voltage, 4-Pin SOT-223 Package BCP53T1G
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Frequently Asked Questions

The maximum DC collector current for this model is 1.5 A, making it suitable for high current applications.

The BCP53T1G has a maximum collector-emitter voltage rating of 80 V, ensuring operational stability in various circuits.

This transistor is housed in a 4-pin SOT-223 surface mount package, which facilitates efficient PCB layout and thermal management.

It operates over a wide temperature range from -65°C to 150°C, making it suitable for harsh environments.

The minimum DC current gain (hFE) for this model is 40, allowing for effective signal amplification.

The maximum power dissipation for the BCP53T1G is 1.5 watts, which ensures reliable performance during operation.

The dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

Yes, it is compliant with the AEC-Q101 automotive standard, indicating its suitability for automotive applications.

The maximum transition frequency for the BCP53T1G is 35 MHz, suitable for moderate speed circuits.

The maximum emitter-base voltage (VEBO) for this model is 5 V DC.

This transistor is designed for general-purpose amplifier applications, including industrial control systems and power management devices.

The BCP53T1G is a PNP bipolar transistor, suitable for various circuit configurations.

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