Toshiba Bipolar Transistor 200 mA NPN 50 V 3-Pin SOT-23 TBC847B,LM(T

Toshiba TBC847B,LM(T Bipolar Transistor is a new silicon NPN epitaxial transistor suited for low frequency amplifier circuits with a maximum collector current of 200 mA and collector emitter voltage rating of 50 V. Encased in a compact 3-pin SOT-23 surface mount package, this transistor facilitates modern PCB assembly techniques.

This device offers a minimum DC current gain of 200, ensuring efficient signal amplification in electronic circuits. It comfortably operates within a wide temperature range from −55°C up to 150°C, making it suitable for diverse industrial and laboratory conditions. The maximum power dissipation of 320 mW enables its use in low power applications where heat generation needs to be minimal.

The transistor configuration is single, with NPN polarity, ideal for various discrete semiconductor applications in electronics and power connectors. The physical dimensions of 2.9 mm length, 2.4 mm width, and 0.95 mm height further contribute to its compactness for space-constrained designs.

Maximum DC collector current of 200 mA supports moderate current applications. Collector emitter voltage is rated at 50 V for reliable operation in low voltage circuits. Compact 3-pin SOT-23 package allows surface mounting on PCBs.

High minimum DC current gain (hFE) of 200 ensures good amplification performance. Operating temperature range from −55°C to 150°C supports varied environmental conditions. NPN transistor polarity suits general low frequency amplifier designs.

Maximum power dissipation of 320 mW for low power applications. Physical dimensions are 2.9 mm length, 2.4 mm width, and 0.95 mm height. Mount type is surface mount for modern PCB designs. Designed as a single transistor configuration for straightforward circuit integration.

This Toshiba bipolar transistor is extensively used in industrial, electronic, and power connector applications including signal amplification and switching circuits. It offers reliable semiconductor performance for designers and engineers requiring efficient transistor operation at low power and moderate voltage levels.

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