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| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 3.7mm |
| Length | 6.7mm |
| Model | BCP68T1G |
| Width | 7.3mm |
| Mount Type | Surface |
| Series | BCP8G |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 20V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 25V dc |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
onsemi BCP68T1G Bipolar Transistor is a general-purpose NPN transistor designed for electronic applications requiring up to 1 ampere collector current with a maximum collector emitter voltage of 20 volts. Packaged in a compact 4-pin SOT-223 surface mount format, it supports efficient PCB assembly and reliable operation.
This transistor features a minimum DC current gain (hFE) of 50, maximum power dissipation of 1.5 W, and a maximum transition frequency of 30 MHz, making it suitable for switching and amplification circuits in industrial, electronic component manufacturing, and power control applications.
With a broad operating temperature range from -65°C to 150°C, this transistor maintains performance in demanding environments. Its compact size with dimensions of 6.7 mm length, 7.3 mm width, and 3.7 mm height optimizes space on circuit boards.
The device is surface mountable on PCBs using the SOT-223 package with 4 pins, facilitating integration in automated assembly lines and high-efficiency electronic systems.
The BCP68T1G transistor is made in Malaysia, adheres to general component standards, and is suitable for use in power management, industrial automation, communication equipment, consumer electronics, and other electronic semiconductor applications.
Supports a maximum collector current of 1 ampere. Maximum collector emitter voltage rated at 20 volts. Surface mount package type SOT-223 with 4 pins for easy PCB integration. Minimum DC current gain (hFE) of 50 ensures reliable amplification.
Operates reliably between temperatures of -65°C to 150°C. Maximum power dissipation of 1.5 watts ensures stable operation under load. High transition frequency of 30 MHz suitable for switching applications. Compact dimensions with 6.7 mm length, 7.3 mm width, and 3.7 mm height.
Designed as a general-purpose NPN bipolar transistor for electronic circuits. Manufactured in Malaysia and rated for a maximum collector base voltage of 25 V dc.
Discover a broad range of Bipolar Transistors and other semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial and commercial electronic component needs.
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