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onsemi Transistor 1 A NPN 20 V 4-Pin SOT-223 BCP68T1G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin Malaysia
Brand onsemi
Height 3.7mm
Length 6.7mm
Model BCP68T1G
Width 7.3mm
Mount Type Surface
Series BCP8G
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 50
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 25V dc
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Supports a maximum collector current of 1 ampere.
  • Maximum collector emitter voltage rated at 20 volts.
  • Surface mount package type SOT-223 with 4 pins for easy PCB integration.
  • Minimum DC current gain (hFE) of 50 ensures reliable amplification.
  • Operates reliably between temperatures of -65°C to 150°C.
  • Maximum power dissipation of 1.5 watts ensures stable operation under load.
  • High transition frequency of 30 MHz suitable for switching applications.
  • Compact dimensions with 6.7 mm length, 7.3 mm width, and 3.7 mm height.

Product Description

onsemi BCP68T1G Bipolar Transistor is a general-purpose NPN transistor designed for electronic applications requiring up to 1 ampere collector current with a maximum collector emitter voltage of 20 volts. Packaged in a compact 4-pin SOT-223 surface mount format, it supports efficient PCB assembly and reliable operation.

This transistor features a minimum DC current gain (hFE) of 50, maximum power dissipation of 1.5 W, and a maximum transition frequency of 30 MHz, making it suitable for switching and amplification circuits in industrial, electronic component manufacturing, and power control applications.

With a broad operating temperature range from -65°C to 150°C, this transistor maintains performance in demanding environments. Its compact size with dimensions of 6.7 mm length, 7.3 mm width, and 3.7 mm height optimizes space on circuit boards.

The device is surface mountable on PCBs using the SOT-223 package with 4 pins, facilitating integration in automated assembly lines and high-efficiency electronic systems.

The BCP68T1G transistor is made in Malaysia, adheres to general component standards, and is suitable for use in power management, industrial automation, communication equipment, consumer electronics, and other electronic semiconductor applications.

Supports a maximum collector current of 1 ampere. Maximum collector emitter voltage rated at 20 volts. Surface mount package type SOT-223 with 4 pins for easy PCB integration. Minimum DC current gain (hFE) of 50 ensures reliable amplification.

Operates reliably between temperatures of -65°C to 150°C. Maximum power dissipation of 1.5 watts ensures stable operation under load. High transition frequency of 30 MHz suitable for switching applications. Compact dimensions with 6.7 mm length, 7.3 mm width, and 3.7 mm height.

Designed as a general-purpose NPN bipolar transistor for electronic circuits. Manufactured in Malaysia and rated for a maximum collector base voltage of 25 V dc.

Discover a broad range of Bipolar Transistors and other semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial and commercial electronic component needs.

onsemi Transistor 1 A NPN 20 V 4-Pin SOT-223 BCP68T1G
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Frequently Asked Questions

The maximum collector current for this transistor is 1 ampere.

The maximum collector-emitter voltage rated for this model is 20 volts.

This transistor has dimensions of 6.7 mm in length, 7.3 mm in width, and 3.7 mm in height.

The minimum DC current gain (hFE) for the BCP68T1G is 50.

The maximum power dissipation for this transistor is 1.5 watts.

It operates reliably between temperatures of -65°C to 150°C.

This model is packaged in a surface mount SOT-223 format with 4 pins.

The maximum transition frequency for the BCP68T1G is 30 MHz, making it suitable for switching applications.

The maximum collector-base voltage (VCBO) for this transistor is 25 V dc.

The BCP68T1G is a general-purpose NPN bipolar transistor.

This transistor is manufactured in Malaysia.

It is suitable for power management, industrial automation, communication equipment, and consumer electronics.

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