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onsemi Bipolar Transistor NPN 100 mA 45 V 6-Pin SOT-363 Surface Mount BC847BDW1T3G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model BC847BDW1T3G
Width 1.35mm
Mount Type Surface
Series BC847BDW1
Maximum Operating Temperature 150°C
Package Type SOT-363
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor has a 6-pin SOT-363 surface mount package.
  • It features a minimum DC current gain (hFE) of 200.
  • The transistor supports a maximum transition frequency of 100 MHz.
  • Its maximum power dissipation is 380 mW, ensuring reliable operation within limits.
  • Designed to operate up to a maximum temperature of 150°C.
  • Compliant with Automotive Standard AEC-Q101, suitable for automotive systems.
  • The package dimensions are 2.2 mm length, 1.35 mm width, and 1.1 mm height.
  • It has isolated transistor configuration and supports surface mount technology.

Product Description

onsemi BC847BDW1T3G Bipolar Transistor is a high-performance NPN small signal transistor designed for discrete semiconductor applications. With a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V, it is suitable for low-power amplification and switching circuits in industrial, automotive, and electronic device manufacturing.

The device features a compact 6-pin SOT-363 surface mount package with dimensions 2.2 mm length, 1.35 mm width, and 1.1 mm height, ensuring efficient PCB space utilization. Its isolated transistor configuration enhances circuit design flexibility and reliability.

This transistor supports a minimum DC current gain (hFE) of 200 and a maximum transition frequency (ft) of 100 MHz, making it ideal for high-frequency signal amplification and switching applications.

It is rated for a maximum power dissipation of 380 mW and can withstand operating temperatures up to 150°C, suitable for demanding environments including automotive electronics, adhering to AEC-Q101 automotive quality standard.

The BC847BDW1 series from onsemi is engineered for reliability and performance in various industrial and electronic applications requiring compact, high-frequency NPN transistors. This transistor has a 6-pin SOT-363 surface mount package.

Features a minimum DC current gain (hFE) of 200. Provides maximum transition frequency of 100 MHz. Rated for maximum power dissipation of 380 mW. Complies with Automotive Standard AEC-Q101 for automotive use. Compact dimensions for optimized PCB design.

Suitable for industrial, automotive, and electronic manufacturing applications. Explore more semiconductor solutions and Bipolar Transistors on EnvMart for your industrial and electronic design needs.

onsemi Bipolar Transistor NPN 100 mA 45 V 6-Pin SOT-363 Surface Mount BC847BDW1T3G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this transistor is 45 V.

This model features a minimum DC current gain (hFE) of 200.

The maximum power dissipation for this transistor is rated at 380 mW.

It can operate at a maximum temperature of 150°C.

The package dimensions are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

It supports a maximum transition frequency of 100 MHz.

This model is an NPN bipolar transistor with an isolated configuration.

Yes, it is compliant with Automotive Standard AEC-Q101, making it suitable for automotive systems.

The maximum DC collector current (Idc) for this transistor is 100 mA.

The package type of this transistor is SOT-363, which is designed for surface mount applications.

The maximum emitter-base voltage (VEBO) for this transistor is 6 V.

This transistor is suitable for low-power amplification and switching circuits in industrial, automotive, and electronic device manufacturing.

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