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Nexperia Low Saturation Voltage PNP Transistor 1 A, 150 V, 4-Pin SOT-223 PBHV9115Z,115

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Nexperia Low Saturation Voltage PNP Transistor 1 A, 150 V, 4-Pin SOT-223 PBHV9115Z,115

Name: Nexperia Low Saturation Voltage PNP Transistor 1 A, 150 V, 4-Pin SOT-223 PBHV9115Z,115
Brand: Nexperia
SKU: 246697
Price: 0.42 USD
Availability: InStock

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Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.8mm
Length	6.7mm
Model	PBHV9115Z,115
Width	7.3mm
Mount Type	Surface
Series	PBHV9115Z
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Collector Emitter Voltage Vceo	-150V
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-6V
Maximum Collector Base Voltage VCBO	-200V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	1.4W
Maximum DC Collector Current Idc	-1A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Maximum collector current of 1 ampere for robust performance.
Collector-emitter voltage rating of 150 volts for high voltage tolerance.
Compact 4-pin SOT-223 surface-mount package for space-efficient designs.
High minimum DC current gain (hFE) of 100 ensuring strong amplification.
Maximum power dissipation of 1.4 watts to handle moderate power loads.
Operates within a wide temperature range from -55°C to 150°C.
Meets automotive AEC-Q101 standard for high reliability in automotive applications.
Complies with RoHS for environmental safety and sustainability.

Product Description

Nexperia PBHV9115Z,115 low saturation voltage PNP transistor is engineered for efficient switching and amplification in electronic circuits. This single transistor features a maximum collector current of 1 A and a collector-emitter voltage rating up to 150 V, making it suitable for a variety of power and signal applications.

Housed in a compact 4-pin SOT-223 surface-mount package, this device is ideal for applications demanding space-saving designs without compromising performance. Its high minimum DC current gain of 100 ensures effective signal amplification, while the maximum power dissipation of 1.4 W supports moderate power levels.

The transistor withstands operating temperatures ranging from -55°C to 150°C, including adherence to the automotive AEC-Q101 standard, ensuring reliability in demanding automotive and industrial environments. Additionally, it meets RoHS standards, confirming compliance with environmental directives.

Low collector-emitter saturation voltage helps reduce power losses and heat generation during operation, enhancing overall efficiency. The transistor's maximum collector-base and emitter-base voltage ratings (-200 V and -6 V respectively) provide robust electrical limits for safe operation.

This product is suitable for industrial, automotive, manufacturing, and various electronic design applications where reliable, efficient PNP transistors are required. Maximum collector current of 1 A for robust operation.

Compact 4-pin SOT-223 surface mount package design. High current gain with minimum hFE of 100. Wide operating temperature range from -55°C to 150°C. Compliance with automotive AEC-Q101 and RoHS standards. Maximum power dissipation of 1.4 W supports moderate loads.

Low saturation voltage reduces heat generation. Electrical ratings of collector-emitter voltage 150 V, collector-base voltage 200 V, and emitter-base voltage 6 V. Dimensions: 6.7 mm length x 7.3 mm width x 1.8 mm height.

Produced in China. Explore the extensive range of Bipolar Transistors at EnvMart for reliable components tailored to your electronic assembly needs.