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DiodesZetex Small Signal PNP Transistor, Maximum DC Collector Current -100mA, Collector Emitter Voltage -30V BC858C-7-F

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC858C-7-F
Width 2.5mm
Mount Type Surface
Series BC858C
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 420
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 350mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum DC collector current of -100 mA for small signal amplification.
  • Maximum collector emitter voltage is -30 V ensuring reliability in low voltage circuits.
  • Surface mount device with 3-pin SOT-23 package for compact PCB integration.
  • High current gain (hFE) of 420 enabling efficient transistor switching.
  • Operating temperature range spans from -55°C to 150°C suitable for diverse environments.
  • Maximum power dissipation of 350 mW allows moderate power applications.
  • Complies with Automotive Standard AEC-Q101 ensuring quality and reliability.
  • Maximum transition frequency of 100 MHz supporting high frequency switching applications.

Product Description

DiodesZetex BC858C-7-F is a precision small signal PNP transistor packaged in a compact 3-pin SOT-23 surface mount device. It is designed for use in electronic circuits requiring a maximum DC collector current of -100 mA and a collector emitter voltage rating of -30 V, making it well-suited for low voltage switching and amplification applications.

This transistor features a high DC current gain (hFE) of 420, enabling efficient transistor operation and signal amplification. It dissipates up to 350 mW of power and can operate over a wide temperature range from -55°C to 150°C, supporting applications in harsh and automotive environments.

The BC858C-7-F meets the stringent requirements of the automotive standard AEC-Q101, ensuring quality, durability, and reliability for automotive and industrial use cases. Its transition frequency of 100 MHz allows effective switching in high-frequency circuits such as communication devices and signal processors.

Physically, the device measures 3 mm in length, 2.5 mm in width, and 1.1 mm in height, making it ideal for dense PCB layouts. The transistor’s PNP polarity and single transistor configuration provide versatile use in amplification, switching, and signal processing tasks.

This component is essential for applications in industrial electronics, automotive sensor modules, HVAC controls, manufacturing equipment, and general electronic component assemblies. Its surface mount package supports automated assembly lines for efficient high-volume production.

Supports a maximum DC collector current of -100 mA for small signal amplification. Maximum collector emitter voltage is -30 V ensuring reliability in low voltage circuits. Surface mount device with 3-pin SOT-23 package for compact PCB integration.

High current gain (hFE) of 420 enabling efficient transistor switching. Operating temperature range spans from -55°C to 150°C suitable for diverse environments. Maximum power dissipation of 350 mW allows moderate power applications.

Complies with Automotive Standard AEC-Q101 ensuring quality and reliability. Maximum transition frequency of 100 MHz supporting high frequency switching applications. Compact dimensions: Length 3 mm, Width 2.5 mm, Height 1.1 mm facilitating space-constrained designs.

Transistor polarity is PNP and configuration is single transistor type. Explore more DiodesZetex semiconductor components and Bipolar Transistors on EnvMart for comprehensive electronic design needs.

DiodesZetex Small Signal PNP Transistor, Maximum DC Collector Current -100mA, Collector Emitter Voltage -30V BC858C-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA, suitable for small signal amplification applications.

The maximum collector emitter voltage rating is -30 V, ensuring reliability in low voltage circuits.

This transistor is packaged in a compact 3-pin SOT-23 surface mount device, facilitating space-constrained designs.

It operates over a wide temperature range from -55°C to 150°C, making it suitable for diverse environments.

The maximum power dissipation is 350 mW, allowing it to handle moderate power applications.

This model has a minimum DC current gain (hFE) of 420, enabling efficient transistor operation and signal amplification.

The maximum transition frequency is 100 MHz, supporting high frequency switching applications.

It complies with Automotive Standard AEC-Q101, ensuring quality and reliability for automotive applications.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height, making it ideal for compact PCB integration.

This model features a PNP polarity and a single transistor configuration, suitable for various amplification and switching tasks.

The maximum emitter base voltage (VEBO) is -5 V, which is important for ensuring proper operation in circuits.

This transistor is suitable for applications in industrial electronics, automotive sensor modules, HVAC controls, and general electronic component assemblies.

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