Toshiba Bipolar Transistor NPN 200 mA 50 V 3-Pin SOT-23 TBC847B,LM(T

Toshiba TBC847B,LM(T bipolar transistor is a reliable NPN silicon transistor designed for DC amplification and switching applications. It features a maximum collector current of 200 mA and can withstand collector-emitter voltages up to 50 V. The transistor is built in a surface mount SOT-23 package with three pins, making it ideal for compact electronic devices and automated production processes.

This transistor is single configured and offers a minimum DC current gain (hFE) of 200, making it suitable for analog amplification circuits such as low-frequency amplifiers and signal processing. Its power dissipation rating of 320 mW allows for efficient heat management and stable electrical performance.

With operating temperature limits from -55°C to 150°C, the TBC847B,LM(T transistor is robust for industrial electronics operating under varied environmental conditions. Its compact package size dimensions are approximately 2.9 mm in length, 2.4 mm in width, and 0.95 mm in height, making it ideal for applications where space is at a premium.

Due to its low pin count and surface mount design, this transistor is widely used in PCB-level discrete semiconductor applications requiring reliable switching and amplification in consumer electronics, industrial devices, and automotive circuits (non-automotive standard).

This bipolar transistor features a maximum DC collector current of 200 mA. Maximum collector-emitter voltage rating is 50 V ensuring reliable switching performance. The transistor is configured as a single NPN type with 3 pins in a compact SOT-23 package.

Excellent for use in low-frequency amplifier applications requiring a current gain of at least 200. Surface mount type transistor suitable for automated PCB assembly. Rated for power dissipation up to 320 mW providing stable operation.

Operating temperature range from -55°C to 150°C allowing use in harsh conditions. Compact dimensions of 2.9 mm length, 2.4 mm width, and 0.95 mm height for space-constrained designs.

This Toshiba bipolar transistor is a dependable choice for semiconductor discrete device needs in electronics manufacturing, laboratory instrumentation, and industrial control systems.

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