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Nexperia Transistor, PNP Bipolar Junction, -2.4 A Collector Current, -30 V Collector-Emitter Voltage, 3-Pin PBSS4032PT,215

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBSS4032PT,215
Width 2.5mm
Mount Type Surface
Series PBSS4032PT
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 150
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.1W
Maximum DC Collector Current Idc -2.4A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor is configured as a single PNP type for discrete semiconductor applications.
  • It supports a maximum power dissipation of 1.1 W enabling efficient operation.
  • Boasts a minimum DC current gain (hFE) of 150 for effective amplification.
  • Designed to operate in temperatures ranging from -55°C to 150°C, ensuring reliability in diverse environments.
  • Features low saturation voltage ideal for switching and digital circuits.
  • Complies with RoHS environmental standards and automotive AEC-Q101 requirements.

Product Description

Nexperia PBSS4032PT,215 is a low saturation voltage PNP Bipolar Junction Transistor designed for use in high-efficiency switching and digital applications. It offers a maximum DC collector current of -2.4 A and a maximum collector-emitter voltage of -30 V in a compact 3-pin SOT-23 surface mount package.

This single transistor configuration supports a maximum power dissipation of 1.1 W and features a minimum DC current gain (hFE) of 150, providing robust amplification capabilities. The device can sustain operating temperatures between -55°C and 150°C, making it suitable for various industrial and automotive environments.

The transistor features a maximum transition frequency of 100 MHz and low saturation voltage, resulting in reduced power losses and heat generation, enhancing overall efficiency and reliability.

Its compliance with RoHS and automotive AEC-Q101 standards ensures it meets strict environmental and quality criteria, making it ideal for automotive and industrial applications. The compact SOT-23 package with dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height enables high-density PCB designs in electronics manufacturing.

Single PNP transistor configuration for discrete semiconductor use. Maximum DC collector current of -2.4 A provides ample current capacity. Low collector-emitter voltage of -30 V supports suitable switching voltages. Compact 3-pin SOT-23 surface mount package for space-saving designs.

Meets automotive AEC-Q101 and RoHS standards for quality and environmental compliance. Wide operating temperature range from -55°C to 150°C for industrial reliability. Minimum DC current gain of 150 ensures effective transistor operation.

Maximum power dissipation rating of 1.1 W supports moderate power applications. Maximum transition frequency of 100 MHz suitable for mid-frequency switching.

This Nexperia transistor is widely used in industrial electronics, automotive systems, power management circuits, and discrete component applications. It supports the design of efficient, reliable, and compact electronic products requiring PNP bipolar transistor functionality.

Explore extensive collections of Bipolar Transistors, semiconductors, and discrete components at EnvMart to meet your industrial and manufacturing needs.

Nexperia Transistor, PNP Bipolar Junction, -2.4 A Collector Current, -30 V Collector-Emitter Voltage, 3-Pin PBSS4032PT,215
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Frequently Asked Questions

The maximum DC collector current for this model is -2.4 A.

This transistor has a maximum collector-emitter voltage rating of -30 V.

It supports a maximum power dissipation of 1.1 W.

The minimum DC current gain (hFE) is 150, ensuring effective amplification.

The dimensions of the SOT-23 package are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It operates within a temperature range of -55°C to 150°C.

The maximum transition frequency is 100 MHz.

It complies with RoHS environmental standards and automotive AEC-Q101 requirements.

This model uses surface mounting.

It is configured as a single PNP transistor for discrete semiconductor applications.

The maximum emitter-base voltage (VEBO) is -5 V.

It is suitable for high-efficiency switching and digital applications, as well as automotive systems and power management circuits.

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