onsemi Power Bipolar NPN Transistor 5 A 450 V TO-220 Package 3-Pin MJE18004G

onsemi MJE18004G is a power bipolar NPN transistor designed for use in electronic circuits requiring high current and voltage handling capabilities. This transistor supports a maximum DC collector current of 5 A and a collector-emitter voltage rating of 450 V, making it suitable for power amplification and switching applications.

The transistor is packaged in a TO-220 form factor with through-hole mounting, enabling easy installation on printed circuit boards in industrial and commercial electronic equipment. Its single transistor configuration ensures straightforward application and compatibility with a variety of circuit designs.

The device delivers a maximum power dissipation of 75 W, allowing it to handle significant power loads reliably. Its maximum transition frequency of 13 MHz supports moderate frequency switching requirements often found in power supplies, motor drives, and amplification circuits.

Operating temperature margins from -65°C to 150°C ensure stable transistor performance across harsh environmental conditions, suitable for industrial, manufacturing, and power electronics use cases.

Key electrical parameters include a maximum collector-base voltage of 1000 V and maximum emitter-base voltage of 9 V. The transistor exhibits a minimum DC current gain (hFE) of 6, catering to circuit designs that require predictable gain characteristics.

The compact physical dimensions of 29.85 mm height, 10.63 mm length, and 4.9 mm width facilitate integration into varied PCB layouts without consuming excessive board space.

This transistor does not conform to automotive standards and has no specific certifications or approvals listed. It is intended for new condition use across industrial, power, electronics manufacturing, and repair applications.

Designed for through-hole mounting with a TO-220 package type. Maximum power dissipation rating of 75 W supports high power applications. Features a single NPN transistor configuration with maximum operating temperature up to 150°C.

Offers a maximum frequency of 13 MHz suitable for medium frequency switching. Includes high voltage parameters: maximum collector-base voltage 1000 V and emitter-base voltage 9 V. Wide operating temperature range from -65°C to 150°C for robust environmental performance.

Compact dimensions: 29.85 mm height, 10.63 mm length, and 4.9 mm width for easy PCB integration. Low minimum DC current gain of 6 ensures reliable transistor operation in demanding circuits. Explore more power semiconductor components and transistors on EnvMart's extensive electronics category for efficient, reliable industrial and commercial electronic designs.

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