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STMicroelectronics Transistor PNP 1.5 A, 400 V, 1.6 W, 4-Pin SOT-223 STN93003

Category Semiconductor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.9mm
Length 6.7mm
Model STN93003
Width 7mm
Mount Type Surface
Series STN93003
Maximum Operating Temperature 150°C
Package Type SOT-223
Pin Count 4
Maximum Collector Emitter Voltage Vceo -400V
Minimum DC Current Gain hFE 4
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 1.6W
Maximum DC Collector Current Idc -1.5A
Transistor Configuration Single
STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand STMicroelectronics

Key Features

  • Offers a maximum power dissipation of 1.6 W for efficient heat management.
  • Features a low minimum DC current gain (hFE) of 4 suitable for industrial switching applications.
  • Designed for operation up to 150°C maximum temperature for enhanced reliability.
  • Compact dimensions of 7 mm width, 6.7 mm length, and 1.9 mm height for PCB space saving.
  • Compatible with surface mount technology for automated manufacturing processes.
  • Configured as a single transistor with PNP polarity for specific circuit requirements.
  • Maximum emitter-base voltage rating of 5 V to handle moderate signal voltages.
  • Suitable for industrial, power management, and electronic circuit applications.

Product Description

STMicroelectronics STN93003 is a high voltage bipolar PNP transistor optimized for electronic components and power connector uses. It has a maximum DC collector current of 1.5 A, maximum collector-emitter voltage of 400 V, and a power dissipation rating of 1.6 W. Packaged in a compact 4-pin SOT-223 surface mount form factor, this transistor offers reliable performance in power management and discrete semiconductor applications.

This transistor exhibits a minimum DC current gain (hFE) of 4, allowing it to be used in switching and amplification circuits where moderate gain is necessary. Its maximum operating temperature of 150°C supports demanding electrical environments and enhances durability and reliability. Low emitter-base voltage of 5 V ensures compatibility with control circuits.

The physical dimensions of the transistor are 7 mm width, 6.7 mm length, and 1.9 mm height, making it ideal for compact PCB designs and automated assembly lines. As a PNP device, it is suitable for circuits requiring positive ground or reverse polarity configurations.

Applications include industrial electronics, power supply systems, and general purpose switching tasks. Its surface mount packaging reduces assembly time and cost, providing an effective solution for modern electronic and electrical equipment manufacturing.

Maximum collector current: 1.5 A. Maximum collector-emitter voltage: 400 V. Power dissipation: 1.6 W. Low current gain: hFE of 4 minimum. Operating temperature up to 150°C. Compact 4-pin SOT-223 package. Surface mount design for automation.

PNP transistor polarity.

This STMicroelectronics transistor is part of the STN93003 series, enabling designers to create robust power control circuits with ease. It is a new product made in India and suitable for both prototype and mass production applications.

Browse more discrete Semiconductor components and electronic parts on EnvMart for industrial, laboratory, and manufacturing needs.

STMicroelectronics Transistor PNP 1.5 A, 400 V, 1.6 W, 4-Pin SOT-223 STN93003
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Frequently Asked Questions

The maximum collector-emitter voltage for this model is 400 V.

This transistor has a maximum DC collector current rating of 1.5 A.

The maximum power dissipation rating is 1.6 W.

The dimensions of this model are 7 mm in width, 6.7 mm in length, and 1.9 mm in height.

It has a minimum DC current gain (hFE) of 4.

The maximum operating temperature is 150°C.

This model is packaged in a compact 4-pin SOT-223 surface mount form factor.

The maximum emitter-base voltage rating is 5 V.

Yes, it is compatible with surface mount technology, making it suitable for automated manufacturing processes.

This transistor is suitable for industrial electronics, power supply systems, and general purpose switching tasks.

It is configured as a single transistor with PNP polarity.

This model is manufactured in India.

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