ROHM P-Channel MOSFET, Maximum Drain Current 2 A, Drain Source Voltage 45 V, Enhancement Mode, 3-Pin TSMT Package RQ5H020SP

ROHM RQ5H020SP P-Channel MOSFET is a high-performance discrete semiconductor designed for power switching applications requiring up to 2 A maximum continuous drain current and 45 V drain-source voltage. Packaged in a 3-pin TSMT surface mount package, this enhancement mode MOSFET balances compact form factor with efficient electrical performance.

This MOSFET is engineered to operate reliably within a wide temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and consumer electronics environments. The device exhibits a low maximum drain-source resistance (Rds) of 280 mΩ, ensuring minimal conduction losses and improved energy efficiency in switching circuits.

Its forward voltage of -1.2 V and typical gate charge of 9.5 nC at specified gate-source voltage contribute to effective device control and fast switching capability. The maximum power dissipation rating of 1 W allows dependable continuous operation under typical load conditions.

With precise mechanical dimensions (3 mm length, 1.8 mm width, 950 μm height), the RQ5H020SP fits well into compact PCB layouts. Its surface mount type and 3-pin configuration simplify integration into modern electronics manufacturing processes.

This ROHM MOSFET is ideal for applications in power management, signal switching, and energy-efficient electronics such as power supplies, motor control, and battery management systems.

Supports enhancement mode channel operation for efficient switching performance. Surface mount type ensuring versatile PCB assembly compatibility. Low maximum drain source resistance of 280 mΩ minimizes power loss. Operates reliably between -55°C minimum and 150°C maximum temperatures.

Compact package dimensions: 3 mm length, 1.8 mm width, 950 μm height. Maximum power dissipation rating of 1 W for stable performance under load. Gate charge of 9.5 nC at gate-source voltage for effective gate drive control.

Maximum gate-source voltage range of -20 V to +20 V enables robust gate tolerance. Forward voltage of -1.2 V suitable for high-efficiency circuits. Explore more Semiconductor components from ROHM and discover advanced solutions for your electronics projects on EnvMart.