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STMicroelectronics STripFET N-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-220 STP36NF06L

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STMicroelectronics STripFET N-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-220 STP36NF06L

Name: STMicroelectronics STripFET N-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-220 STP36NF06L
Brand: STMicroelectronics
SKU: 190151
Price: 1.71 USD
Availability: InStock

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Category Semiconductor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	9.15mm
Length	10.4mm
Model	STP36NF06L
Width	4.6mm
Mount Type	Through Hole
Series	STripFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	30A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	40mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	70W
Typical Gate Charge Qg @ Vgs	13nC
Maximum Gate Source Voltage Vgs	-18, +18V
Forward Voltage Vf	1.5V

Key Features

Features enhancement type channel mode for reliable switching.
Housed in a 3-Pin TO-220 package suitable for through-hole mounting.
Maximum drain-source resistance of 40 milliohms ensures low conduction losses.
Capable of dissipating up to 70 W of power during operation.
Operates over a temperature range from -55°C to 175°C for robust performance.
Maximum gate-source voltage rating of -18 V to +18 V for protection against voltage spikes.
Typical gate charge of 13 nC optimizes switching speed.
Forward voltage drop measured at 1.5 V supports efficient conduction.

Product Description

STMicroelectronics STP36NF06L is a high-performance N-Channel STripFET MOSFET designed for power switching applications requiring up to 30 A continuous current and maximum 60 V drain-source voltage. This enhancement mode device is housed in a 3-Pin TO-220 package, ideal for through-hole mounting and heat dissipation.

Its maximum drain-source resistance of 40 milliohms reduces conduction losses, improving efficiency in power circuits. The MOSFET supports a gate-source voltage range of -18 V to +18 V, providing robust operational safety. With a typical gate charge of 13 nC, it offers fast switching characteristics important for modern electronic systems.

The device dissipates a maximum power of 70 W, suitable for demanding industrial, automotive, and electronic control applications. It functions reliably across a wide temperature range from -55°C minimum to 175°C maximum operating temperature, ensuring stable performance under harsh conditions.

The compact physical dimensions of this MOSFET - 10.4 mm length, 4.6 mm width, and 9.15 mm height - allow seamless integration into various designs. Its forward voltage drop of 1.5 V further supports efficient power conversion and management.

Typical applications include power management in industrial controls, electronic switching, automotive electronics, and general purpose switching in consumer electronics. This STP36NF06L MOSFET delivers reliable, efficient performance in power-sensitive environments.

Features enhancement type channel mode for reliable switching. 3-Pin TO-220 package supports through-hole mounting and heat dissipation. Maximum continuous drain current of 30 A enables high power capacity. Drain-source voltage rating of 60 V protects against voltage spikes.

Maximum power dissipation of 70 W supports high-performance applications. Wide operating temperature range from -55°C to 175°C. Low maximum drain-source resistance of 40 mΩ reduces conduction losses. Gate charge of 13 nC allows fast switching.

Compact size for versatile integration. For advanced Semiconductor needs, explore the STMicroelectronics range of STripFET MOSFETs at EnvMart.