DiodesZetex Silicon Junction Switching Diode 250 mA 100 V 2-Pin SOD-323 BAV19WS-7-F

DiodesZetex BAV19WS-7-F is a silicon junction switching diode designed for surface mount technology, optimized for use in low power electronic circuits requiring fast switching speeds and efficient performance. It supports a maximum forward current of 250 mA and withstands a peak reverse voltage of 100 V, making it suitable for protecting circuits against voltage transients and enabling fast switching operations.

The diode comes in a space-saving SOD-323 package with a two-pin configuration, ideal for PCB assembly where board space is at a premium. Its peak reverse recovery time of 50 nanoseconds ensures minimal switching losses, enhancing efficiency in switching power supplies, signal processing, and other fast switching applications.

Rated for a maximum power dissipation of 200 mW, this diode supports steady operation without thermal issues over a broad temperature range from -65°C to 150°C. The peak forward surge current of 9A further allows the diode to handle occasional transient current spikes safely. Physical dimensions are compact, measuring 1.8 mm in length, 1.4 mm in width, and 1.1 mm in height, facilitating easy integration into diverse electronic assemblies.

Manufactured in China under the DiodesZetex brand, the BAV19WS-7-F is suitable for industrial, commercial, and consumer electronic applications requiring reliable switching diode performance. It is widely used in power electronics, signal rectification, and switching circuits in various industrial control systems, communication devices, and instrumentation equipment.

This single silicon junction diode is designed for surface mounting using the SOD-323 package. The diode supports a continuous forward current of 250 mA with a peak reverse voltage rating of 100 V. Fast switching is enabled by a peak reverse recovery time of 50 ns for efficiency in switching applications.

Compact physical size allows for flexible application in high density electronic designs. The device is rated for 200 mW power dissipation, supporting low power circuit requirements. Wide temperature operation range (-65°C to 150°C) ensures performance stability under varying environmental conditions.

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