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Nexperia Silicon Junction Switching Diode, Isolated, 215 mA, 75 V, 250 mW, 4-Pin SOT-143 BAS28,215

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1mm
Length 3mm
Model BAS28,215
Width 1.4mm
Mount Type Surface
Series BAS28
Maximum Operating Temperature 150°C
Package Type SOT-143
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Power Dissipation Pd 250mW
Diode Configuration Isolated
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 215mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V
onsemi 100 V 200 mA Diode Switching 6-Pin SOT-563 BAS16DXV6T1GBrand onsemi

Key Features

  • Designed for surface mount applications in SOT-143 package for compact circuit design.
  • Supports high switching speeds with low leakage current and low capacitance.
  • Maximum power dissipation is 250 mW, suitable for small signal applications.
  • Operates reliably between -65°C to 150°C temperature range.
  • Features peak reverse recovery time of 4 ns to optimize switching efficiency.
  • Non-automotive grade silicon junction diode manufactured in China.
  • Ideal for electronic, industrial, power supply, and signal switching use cases.

Product Description

Nexperia BAS28,215 Silicon Junction Switching Diode is an isolated small signal diode designed for high density circuit boards and surface mounting in the compact SOT-143 4-pin package. With a maximum forward current of 215 mA and a peak reverse voltage of 75 V, it offers reliable switching performance for various electronic and industrial applications.

This diode supports high switching speeds with a fast peak reverse recovery time of 4 nanoseconds and low junction capacitance, making it suitable for high frequency signal switching tasks. Its maximum power dissipation rating of 250 milliwatts supports efficient operation without thermal issues.

The diode operates across a wide temperature range from -65°C minimum to 150°C maximum, ensuring durability under varying environmental conditions. Its physical dimensions (3 mm length, 1.4 mm width, and 1 mm height) allow it to fit densely packed electronic assemblies.

Applications include power supplies, industrial electronic circuits, telecommunications equipment, and other devices requiring fast switching diodes. The isolated diode configuration enhances circuit integrity by minimizing interference.

Designed for surface mount technology in SOT-143 package. High-speed switching with low leakage current and capacitance. Wide operating temperature range from -65°C to 150°C. Maximum forward current 215 mA and peak reverse voltage 75 V.

Maximum power dissipation of 250 mW suits low power applications. Compact 4-pin design with small physical footprint. Ideal for industrial, electronic, telecommunications, and power circuits. Explore more semiconductor components and Switching Diodes in EnvMart’s Electronics & Electricals category for your industrial and manufacturing projects.

Nexperia Silicon Junction Switching Diode, Isolated, 215 mA, 75 V, 250 mW, 4-Pin SOT-143 BAS28,215
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Frequently Asked Questions

The maximum forward current of this model is 215 mA, making it suitable for small signal applications.

This diode has a peak reverse voltage rating of 75 V, allowing it to handle various electronic applications effectively.

The maximum power dissipation for this diode is 250 mW, which supports efficient operation in low power applications.

It operates reliably within a temperature range of -65°C to 150°C, ensuring functionality under varying environmental conditions.

This model is packaged in a SOT-143 type with a pin count of 4, designed for surface mount applications.

The peak reverse recovery time is 4 nanoseconds, optimizing switching efficiency for high-frequency applications.

The physical dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height, allowing for compact integration into circuit designs.

The BAS28,215 features an isolated diode configuration, which helps minimize interference in circuit applications.

It is suitable for various applications including power supplies, industrial electronic circuits, and telecommunications equipment.

This diode is designed for surface mounting, making it ideal for high-density circuit boards.

The maximum forward voltage for this model is 1.25 V, which is typical for silicon junction diodes.

This silicon junction diode is manufactured in China, as indicated by its country of origin.

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