DiodesZetex BAV199T-7-F is a silicon junction small signal switching diode designed for surface mount applications. Featuring a compact 3-pin SC-89 package, this diode supports a maximum forward current of 215 mA and a peak repetitive reverse voltage of 85 V. Its low forward voltage drop of 1.25 V combined with a fast reverse recovery time of 3 microseconds makes it suitable for high-speed switching circuits in electronic component designs.
The diode can withstand a peak non-repetitive forward surge current of 4 A, providing resilience against transient surges in electrical systems. Operating reliably within a temperature range of -65°C to 150°C, it is engineered for long-term durability in various electronic and industrial environments.
With its small footprint - measuring just 1.7 mm in length, 0.85 mm in width, and 0.8 mm in height - the BAV199T-7-F diode supports efficient PCB layout design where space is limited. Its surface mount type configuration facilitates automated assembly processes in manufacturing industries.
This product is particularly applicable in electronics manufacturing, semiconductor device applications, industrial control systems, and general-purpose switching circuits. It is ideal for use in consumer electronics, telecommunications equipment, and embedded system designs.
Though not certified for automotive standards, the diode meets standard semiconductor electrical specifications as per DiodesZetex series requirements. Country of origin is China, delivering reliable quality consistent with industry expectations.
Designed for surface mounting in SC-89 package type. Maximum forward current of 215 mA ensures efficient switching. Peak repetitive reverse voltage rating of 85 V provides robust performance. Low maximum forward voltage of 1.25 V optimizes circuit efficiency.
Fast peak reverse recovery time of 3 microseconds enhances switching speed. Supports peak non-repetitive forward surge current of 4 A for transient conditions. Operating temperature range from -65°C up to 150°C for reliable use.
Compact dimensions of 1.7 mm length, 0.85 mm width, and 0.8 mm height. Constructed with silicon junction technology suitable for switching applications. Manufactured in China under the BAV199T series without automotive certification.
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