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Nexperia Silicon Junction Common Anode Switching Diode 225 mA 200 V 3-Pin SOT-23 BAV23A,215

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Nexperia Silicon Junction Common Anode Switching Diode 225 mA 200 V 3-Pin SOT-23 BAV23A,215

Name: Nexperia Silicon Junction Common Anode Switching Diode 225 mA 200 V 3-Pin SOT-23 BAV23A,215
Brand: Nexperia
SKU: 409839
Price: 0.07 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	BAV23A,215
Width	1.4mm
Mount Type	Surface
Series	BAV23A
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	350mW
Diode Configuration	Common Anode
Peak Non-Repetitive Forward Surge Current Ifsm	9A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	50ns
Maximum Forward Current If	225mA
Maximum Peak Reverse Repetitive Voltage Vrrm	200V

Key Features

Diode has low forward voltage drop of 1.25 V for efficient conduction.
Surface mount package SOT-23 with dimensions 3 mm length, 1.4 mm width, and 1.1 mm height.
High peak non-repetitive forward surge current of 9 A for transient tolerance.
Maximum power dissipation rating of 350 mW ensuring robust operation.
Rated for operating temperatures from -65°C up to 150°C for harsh environments.
Peak reverse recovery time of 50 ns supports high switching speed applications.
Ideal for designing high density, low leakage, and high voltage circuit designs.

Product Description

Nexperia BAV23A,215 is a silicon junction switching diode configured with a common anode and specifically designed for low-level switching and signal processing applications. This diode offers a maximum forward current of 225 mA and withstands a peak reverse voltage of 200 V, making it suitable for various electronic devices requiring reliable diode performance in compact form factors.

Encased in a small surface mount SOT-23 package, its compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height allow for high-density PCB layouts and space-saving designs in industrial, consumer electronics, and telecommunications equipment.

The diode supports high surge conditions with a peak non-repetitive forward surge current of 9 A and maintains a maximum power dissipation of 350 mW, ensuring dependable operation under electrical stress.

With a fast peak reverse recovery time of 50 ns and low forward voltage of 1.25 V, the BAV23A,215 diode enables efficient switching in circuits where speed and low losses are critical. It operates reliably within a wide temperature range from -65°C to 150°C, suitable for demanding environments including automotive and industrial applications.

This silicon junction diode favors customized high-density circuit designs due to its low leakage current and high breakdown voltage characteristics. It is integral to switching diode categories used in signal rectification, voltage clamping, and protection circuits.

Low forward voltage drop improves circuit efficiency. Small surface mount footprint for compact electronics. Supports high surge currents for robust electrical performance. Wide operating temperature range for versatile use cases.

Fast switching speed enhances signal processing capabilities. Common anode configuration suited for multiple diode arrays. This diode is a key component in electronic design labs, manufacturing of power supplies, automotive electronics, telecommunications hardware, and general industrial equipment.

Explore more Switching Diodes and semiconductor solutions in the Electronics & Electricals category at EnvMart to find compatible products for your application needs.