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DiodesZetex Silicon Junction Switching Diode 300 mA 75 V 3-Pin SOT-323 BAV99W-7-F

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DiodesZetex Silicon Junction Switching Diode 300 mA 75 V 3-Pin SOT-323 BAV99W-7-F

Name: DiodesZetex Silicon Junction Switching Diode 300 mA 75 V 3-Pin SOT-323 BAV99W-7-F
Brand: DiodesZetex
SKU: 223711
Price: 0.04 USD
Availability: InStock

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Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	BAV99W-7-F
Width	1.35mm
Mount Type	Surface
Series	BAV99W
Maximum Operating Temperature	150°C
Package Type	SOT-323
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Standards/Approvals	AEC-Q101, Lead Free/RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	200mW
Diode Configuration	Series
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V

Key Features

Designed for switching applications in discrete electronic circuits.
Maximum power dissipation rated at 200 mW for reliable performance.
Fast peak reverse recovery time of 4 ns to minimize switching losses.
Wide operating temperature range from -65°C to 150°C for automotive and industrial use.
Compliant with AEC-Q101 automotive standard and RoHS lead-free directive.
Compact package dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height.
Peak non-repetitive forward surge current of 2 A for transient handling.
Maximum forward voltage of 1.25 V ensuring low conduction losses.

Product Description

DiodesZetex BAV99W-7-F is a silicon junction switching diode designed for use in a variety of electronic applications requiring efficient switching capability. Engineered to handle a maximum forward current of 300 mA, this diode features a 3-pin SOT-323 surface mount package that is compact and ideal for high-density PCB layouts.

The diode supports a peak reverse voltage of 75 V and maximum power dissipation of 200 mW, enabling stable performance under typical switching conditions. Its fast peak reverse recovery time of 4 nanoseconds ensures minimal switching loss, enhancing circuit efficiency.

It is suitable for operation in demanding environments with a temperature range from -65°C up to 150°C, making it optimal for automotive and industrial electronics. Compliance with automotive AEC-Q101 qualification and lead-free RoHS standards verifies its reliability and environmental safety.

The diode's physical dimensions measure 2.2 mm in length, 1.35 mm width, and 1 mm height, allowing compact assembly on printed circuit boards. It can withstand peak non-repetitive forward surge currents up to 2 A, providing robustness against transient conditions in circuits.

The maximum forward voltage rating of 1.25 V ensures low conduction losses during forward operation, contributing to energy-efficient switching. Manufactured in China, this component reflects adherence to strict quality and manufacturing standards.

Designed for switching applications in discrete semiconductor circuits. Maximum allowable forward current of 300 mA. Peak reverse voltage up to 75 V. Compact surface mount SOT-323 package with 3 pins. Fast reverse recovery time of 4 nanoseconds.

Operating temperature spanning -65°C to 150°C. AEC-Q101 automotive standard compliance and RoHS lead-free certification. Power dissipation rated at 200 milliwatts. Peak forward surge current rating of 2 amperes. Physical dimensions: 2.2 mm length, 1.35 mm width, 1 mm height.

Ideal for use in industrial, automotive, and consumer electronics switching diode applications, the BAV99W-7-F provides reliable, efficient performance in a space-saving package. Browse EnvMart for more automotive standard and discrete semiconductor components.

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