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| Country of Origin | India |
|---|---|
| Diameter | 5.3mm |
| Brand | onsemi |
| Height | 9.5mm |
| Length | 9.5mm |
| Model | MUR415G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 125A |
| Maximum Forward Voltage Vf | 890mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 4A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 150V |
onsemi MUR415G is a single silicon junction switching diode designed to handle maximum forward currents of 4 A with a peak reverse repetitive voltage rating of 150 V, housed in a DO-41 package with two pins for through-hole mounting. This diode features a peak reverse recovery time of 35 nanoseconds which makes it suitable for fast switching electronic circuits.
The diode supports a minimum operating temperature of -65°C and can withstand continuous operation up to 175°C, allowing use in demanding industrial and electronic environments. The maximum forward voltage drop of 890 mV ensures efficient electrical conduction, while the peak non-repetitive surge current rating of 125 A provides resilience against current spikes.
Compact physical dimensions of 9.5 mm length and 5.3 mm diameter facilitate installation in space-constrained PCB designs.
This switching diode is essential in power electronics, rectification, and general semiconductor applications in industrial, electronic manufacturing, and automation sectors. The standard DO-41 package supports reliable through-hole mounting in a wide variety of PCB assemblies.
Maximum forward current rating of 4 A for robust power handling. DO-41 through-hole package for easy mounting and durability. Peak reverse voltage of 150 V ensures protection against voltage spikes. Fast switching with 35 ns reverse recovery time.
Wide operating temperature range from -65°C to 175°C. Maximum forward voltage drop of 890 mV for efficient operation. High surge current capacity of 125 A for transient conditions. Compact 9.5 mm by 5.3 mm form factor. No automotive certification applies to this model.
Explore onsemi semiconductor products and Switching Diodes at EnvMart for reliable electronic component supply and industrial-grade quality.
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