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| Country of Origin | China |
|---|---|
| Diameter | 6.73mm |
| Brand | Vishay |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | VS-12EWH06FNTR-M3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | VSX |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 12A |
| Peak Reverse Repetitive Voltage Vrrm | 600V |
| Diode Configuration | Single |
| Rectifier Type | Soft Recovery |
| Peak Reverse Current Ir | 100μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 110A |
| Maximum Forward Voltage Vf | 1.8V |
| Peak Reverse Recovery Time trr | 22ns |
Vishay VS-12EWH06FNTR-M3 soft recovery diode is a high-performance semiconductor designed for power electronics applications requiring efficient switching and low EMI. Rated for 600 V peak reverse voltage and 12 A continuous forward current, this diode utilizes advanced FRED Pt® hyperfast recovery epitaxial and platinum doping technology to minimize leakage currents even at elevated temperatures.
Its TO-252 surface mount package with 3 pins facilitates compact PCB assembly, with a footprint length of 6.73 mm, width of 6.22 mm, and height of 2.39 mm. The diode's maximum junction temperature of 175°C allows operation in demanding environments such as automotive electronics, industrial power supplies, and switched mode power supplies (SMPS).
The diode demonstrates a fast peak reverse recovery time of 22 ns and a low forward voltage of 1.8 V, which contributes to improved energy efficiency and reduced thermal stress. Rated for peak non-repetitive surge currents up to 110 A, this device also ensures high reliability during transient power events.
Designed to comply with RoHS standards and manufactured in China, this diode suits industrial, laboratory, and manufacturing applications where precise diode rectification and fast recovery times are essential.
This diode features soft recovery technology for reduced electromagnetic interference. It has a maximum forward voltage drop of 1.8 V ensuring efficient power handling. Peak reverse recovery time is 22 ns allowing fast switching performance.
The diode can operate at temperatures up to 175°C for high reliability. It is RoHS compliant and uses platinum doping technology for low leakage currents. Its compact 3-pin DPAK package measures 6.73 mm length and 6.22 mm width.
The device supports a peak non-repetitive forward surge current of 110 A. Suitable for switched mode power supplies and other electronic power applications. Operates reliably over a temperature range from -65°C to 175°C.
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