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Nexperia PNP Transistor 2 A, -30 V, 3-Pin SOT-23 PBSS5230T,215

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Nexperia PNP Transistor 2 A, -30 V, 3-Pin SOT-23 PBSS5230T,215

Name: Nexperia PNP Transistor 2 A, -30 V, 3-Pin SOT-23 PBSS5230T,215
Brand: Nexperia
SKU: 193830
Price: 0.18 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	PBSS5230T,215
Width	2.5mm
Mount Type	Surface
Series	PBSS5230T
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-30V
Minimum DC Current Gain hFE	100
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	30V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	480mW
Maximum DC Collector Current Idc	-2A
Transistor Configuration	Single
Maximum Transition Frequency ft	200MHz

Key Features

Maximum DC collector current of -2 A enabling robust performance.
Collector-emitter voltage rated at -30 V for reliable operation.
Compact 3-Pin SOT-23 surface-mount package for space-saving design.
High minimum DC current gain of 100 ensures effective signal amplification.
Maximum power dissipation of 480 mW reduces heat generation during use.
Wide operating temperature range from -65°C to 150°C for diverse environments.
Automotive standard compliant with AEC-Q101 ensuring durability and quality.
Low saturation voltage enhances efficiency in switching and digital circuits.

Product Description

Nexperia PBSS5230T,215 PNP Transistor is a low saturation voltage device engineered for high collector current capacity and energy efficiency in a compact 3-Pin SOT-23 package. Rated for a maximum collector current of -2 A and collector-emitter voltage of -30 V, it suits various semiconductor applications requiring reliability and performance.

This transistor supports a maximum power dissipation of 480 mW, enabling reduced heat generation, which improves overall circuit efficiency and longevity. The device features a minimum DC current gain (hFE) of 100 and a maximum transition frequency of 200 MHz, making it ideal for switching and amplification tasks in both industrial and automotive electronics.

Designed with a surface-mount technology (SMT) footprint, the PBSS5230T,215 offers a compact and space-saving solution for modern electronic circuit designs. Its operating temperature range is broad (-65°C to 150°C), facilitating stable function across a variety of harsh environments.

These transistors comply with the automotive AEC-Q101 standard, assuring quality and robustness required in automotive and industrial applications. Its low collector-emitter saturation voltage helps minimize power losses, further enhancing efficiency in circuit operation.

Maximum collector current of -2 A. Maximum collector-emitter voltage is -30 V. Compact 3-Pin SOT-23 package for surface mounting. Minimum DC current gain of 100. Maximum power dissipation of 480 mW. Operating temperature range from -65°C to 150°C.

Automotive AEC-Q101 compliance. Maximum transition frequency of 200 MHz.

This transistor is widely applicable in the fields of electronics, automotive systems, industrial manufacturing, and telecommunications where compact, reliable PNP transistors are essential. Its design optimizes switching efficiency and reduces heat, contributing to longer device and circuit life cycles.

For engineers and designers seeking compact high-performance bipolar transistors, the Nexperia PBSS5230T,215 is an excellent choice. Browse more Bipolar Transistors and semiconductor components at EnvMart to complement your electronic projects and industrial needs.