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Nexperia 1 A NPN Transistor, Maximum 80 V Collector-Emitter Voltage, 3-Pin SOT-89 Package BSR43,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.5mm
Length 4.6mm
Model BSR43,115
Width 2.5mm
Mount Type Surface
Series BSR43
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 90V
Maximum Power Dissipation Pd 1.35W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
onsemi 2SC3646S-TD-E Transistor, 1 A NPN, 100 V, 3-Pin PCPBrand onsemi
Diodes Inc BSR43TA NPN Transistor, 1 A, 80 V, 3-Pin SOT-89Brand DiodesZetex
Nexperia BSR43TA NPN Transistor, 1 A, 80 V, 3-Pin SOT-89Brand Nexperia

Key Features

  • Supports a maximum DC collector current of 1 ampere.
  • Features a 3-pin SOT-89 surface-mount package type.
  • Rated for a maximum power dissipation of 1.35 watts for reliable thermal performance.
  • Transistor configuration is single polarity NPN type.
  • Supports operating temperatures ranging from -65°C to 150°C.
  • Pin count includes three pins for easy PCB integration.
  • High minimum DC current gain hFE of 100 enables strong amplification.
  • Compact dimensions with length 4.6 mm, width 2.5 mm, and height 1.5 mm.

Product Description

Nexperia BSR43,115 is a general-purpose NPN bipolar transistor suitable for switching and amplification in electronic circuits. It supports a maximum DC collector current of 1 ampere and a maximum collector-emitter voltage rating of 80 volts, making it ideal for moderate power applications.

This transistor features a compact 3-pin SOT-89 surface mount package, allowing for efficient PCB space utilization in industrial, consumer electronics, and automation systems. It offers a high minimum DC current gain (hFE) of 100, ensuring good signal amplification in circuit designs.

Rated for reliable operation over an extended temperature range from -65°C to 150°C, the BSR43,115 transistor is suitable for demanding environments including industrial machinery, automotive electronics, and HVAC controllers. Its maximum power dissipation of 1.35 watts supports stable thermal performance under typical load conditions.

The device dimensions are 4.6 mm in length, 2.5 mm in width, and 1.5 mm in height, making it suitable for compact PCB layouts. Its voltage ratings include a collector-base maximum of 90 V and emitter-base maximum of 5 V, supporting a wide variety of circuit topologies.

Key technical applications include general amplification, switching loads, driver stages, and signal processing within laboratory instruments, manufacturing equipment, and electronic prototyping platforms.

Supports a maximum collector current of 1 A. Maximum collector-emitter voltage is 80 V. Compact 3-pin SOT-89 surface mount package. High gain with minimum hFE of 100. Power dissipation up to 1.35 W. Wide operating temperature range from -65°C to 150°C.

Dimensions: 4.6 mm x 2.5 mm x 1.5 mm. Single NPN transistor configuration. Suitable for industrial, automotive, and commercial electronics.

Choose the Nexperia BSR43,115 transistor to ensure reliable and efficient performance in your discrete semiconductor needs. Browse more Bipolar Transistors and related electronic components on EnvMart.

Nexperia 1 A NPN Transistor, Maximum 80 V Collector-Emitter Voltage, 3-Pin SOT-89 Package BSR43,115
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Frequently Asked Questions

The maximum collector-emitter voltage for this model is 80 volts.

This transistor supports a maximum DC collector current of 1 ampere.

The BSR43,115 transistor comes in a 3-pin SOT-89 surface mount package.

The minimum DC current gain (hFE) for this transistor is 100.

The dimensions of this model are 4.6 mm in length, 2.5 mm in width, and 1.5 mm in height.

The maximum power dissipation rating for the BSR43,115 is 1.35 watts.

This transistor operates within a temperature range of -65°C to 150°C.

The BSR43,115 features a single NPN transistor configuration.

The maximum emitter-base voltage (VEBO) for this model is 5 volts.

This transistor is suitable for general amplification, switching loads, driver stages, and signal processing in various electronic circuits.

The maximum collector-base voltage (VCBO) for this model is 90 volts.

The BSR43,115 transistor is manufactured in India.

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