World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi Small Signal NPN Transistor 3-Pin SOT-23 500 mA, 80 V DC, 225 mW, hFE 100 MMBTA06LT3G

Free Delivery in India | Lowest Global Shipping Charges

onsemi Small Signal NPN Transistor 3-Pin SOT-23 500 mA, 80 V DC, 225 mW, hFE 100 MMBTA06LT3G

Name: onsemi Small Signal NPN Transistor 3-Pin SOT-23 500 mA, 80 V DC, 225 mW, hFE 100 MMBTA06LT3G
Brand: onsemi
SKU: 409640
Price: 0.03 USD
Availability: InStock



Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBTA06LT3G
Width	2.64mm
Mount Type	Surface
Series	MMBTA06L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V dc
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	4V
Maximum Collector Base Voltage VCBO	80V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Supports a maximum power dissipation of 225 mW ensuring reliable operation.
Stable transistor gain with minimum DC current gain (hFE) of 100.
Designed for surface mount applications with compact SOT-23 package.
Wide operating temperature range from -55°C to 150°C for harsh environments.
High transition frequency of 100 MHz suitable for high-speed electronic circuits.
Features NPN polarity with single transistor configuration for versatile usage.
Supports maximum emitter base voltage of 4 V and collector base voltage of 80 V.
Ideal for small signal amplification and switching in electronic devices.

Product Description

onsemi MMBTA06LT3G is a Small Signal NPN Bipolar Junction Transistor available in a compact 3-Pin SOT-23 surface mount package. Designed for a maximum DC collector current of 500 mA and collector-emitter voltage of 80 V DC, it supports applications requiring efficient amplification and switching performance in a small form factor.

This transistor offers a maximum power dissipation of 225 mW which ensures reliable power handling in compact circuits. The device exhibits a minimum DC current gain (hFE) of 100, contributing to stable gain characteristics essential for audio and signal processing circuits.

Engineered to operate across a temperature range from -55°C to 150°C, it is well-suited for industrial, automotive, and general-purpose electronics operating in harsh environments. Its maximum transition frequency (ft) of 100 MHz makes it appropriate for high-frequency applications.

The transistor features a single NPN configuration, with a maximum emitter base voltage of 4 V and maximum collector base voltage of 80 V, ensuring robust electrical performance. Its surface mount SOT-23 package enables space-saving PCB layouts in compact designs.

With dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height, the MMBTA06LT3G supports modern miniaturized electronic products including communication devices, sensors, and automotive modules.

Supports a maximum power dissipation of 225 mW ensuring reliable operation. Stable transistor gain with minimum DC current gain (hFE) of 100. Designed for surface mount applications with compact SOT-23 package. Wide operating temperature range from -55°C to 150°C for harsh environments.

High transition frequency of 100 MHz suitable for high-speed electronic circuits. Features NPN polarity with single transistor configuration for versatile usage. Compact dimensions perfect for PCB space optimization. Suitable for industrial, automotive, and general electronic applications.

This transistor is ideal for designers and engineers seeking a reliable small signal transistor for signal amplification and switching tasks. Explore more transistors and electronic components in the Bipolar Transistors category on EnvMart.