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onsemi Dual NPN and PNP Bipolar Transistor 3 A, 40 V, 8-Pin SOIC NSS40302PDR2G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 5mm
Model NSS40302PDR2G
Width 4mm
Mount Type Surface
Series e2PowerEdge
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 180
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 783mW
Maximum DC Collector Current Idc 3A
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor assembly features isolated NPN and PNP configurations in a compact 8-Pin SOIC package.
  • Maximum power dissipation of 783 mW supports efficient thermal management.
  • High DC current gain with a minimum hFE of 180 ensures reliable switching performance.
  • Wide operating temperature range from -55°C to 150°C for robust industrial applications.
  • Designed according to the automotive AEC-Q101 standard ensuring high reliability for automotive systems.
  • Maximum transition frequency of 100 MHz suitable for high-frequency switching circuits.
  • Surface mountable type ensures ease of assembly in automated manufacturing processes.

Product Description

onsemi NSS40302PDR2G is a dual NPN and PNP bipolar transistor module housed in an 8-pin SOIC surface-mount package. It delivers a maximum DC collector current of 3 A and can withstand a collector-emitter voltage up to 40 V. This device integrates both transistor types isolated internally to enable complementary circuitry packaging in compact spaces.

The transistor ensures a minimum DC current gain (hFE) of 180, providing effective amplification and switching performance. The maximum power dissipation rating of 783 mW allows for adequate heat dissipation in typical operating conditions. The device operates within an extended temperature range from -55°C to +150°C, making it suitable for challenging industrial and automotive environments.

Conforming to the automotive standard AEC-Q101, NSS40302PDR2G meets strict reliability requirements for automotive electronics. Its maximum transition frequency of 100 MHz supports high-speed switching applications. The transistor dimensions - 1.75 mm height, 5 mm length, and 4 mm width - facilitate compact PCB designs especially in space-constrained applications.

This bipolar transistor package is ideal for use in industrial, automotive, power management, and switching applications requiring efficient dual transistor integration. It supports surface mount technology assembly lines, enhancing manufacturing efficiency and reducing production downtime.

This transistor assembly features isolated NPN and PNP configurations in a compact 8-Pin SOIC package. Maximum power dissipation of 783 mW supports efficient thermal management. High DC current gain with a minimum hFE of 180 ensures reliable switching performance.

Wide operating temperature range from -55°C to 150°C for robust industrial applications. Designed according to the automotive AEC-Q101 standard ensuring high reliability for automotive systems. Maximum transition frequency of 100 MHz suitable for high-frequency switching circuits.

Compact dimensions: height 1.75 mm, length 5 mm, and width 4 mm for space-saving PCB layouts. Surface mountable type ensures ease of assembly in automated manufacturing processes. Explore the Electronics & Electricals category on EnvMart for high-quality Bipolar Transistors and semiconductor components by onsemi and other leading brands.

onsemi Dual NPN and PNP Bipolar Transistor 3 A, 40 V, 8-Pin SOIC NSS40302PDR2G
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Frequently Asked Questions

The maximum DC collector current for this model is 3 A.

This transistor can withstand a maximum collector-emitter voltage of 40 V.

The minimum DC current gain (hFE) is 180, ensuring effective amplification and switching performance.

The maximum power dissipation for this model is 783 mW, allowing for efficient thermal management.

This unit operates within a wide temperature range from -55°C to 150°C, suitable for industrial applications.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency switching applications.

The dimensions of this transistor are 1.75 mm in height, 5 mm in length, and 4 mm in width.

It is housed in an 8-pin SOIC surface-mount package, facilitating compact PCB designs.

Yes, it is designed according to the automotive AEC-Q101 standard, ensuring high reliability for automotive systems.

This model features isolated NPN and PNP configurations, allowing for complementary circuitry integration.

This transistor supports surface mounting, which enhances assembly efficiency in automated manufacturing processes.

This bipolar transistor is suitable for industrial, automotive, power management, and switching applications.

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