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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 5mm |
| Model | NSS40302PDR2G |
| Width | 4mm |
| Mount Type | Surface |
| Series | e2PowerEdge |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | NPN + PNP |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 40V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 783mW |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 100MHz |
onsemi NSS40302PDR2G is a dual NPN and PNP bipolar transistor module housed in an 8-pin SOIC surface-mount package. It delivers a maximum DC collector current of 3 A and can withstand a collector-emitter voltage up to 40 V. This device integrates both transistor types isolated internally to enable complementary circuitry packaging in compact spaces.
The transistor ensures a minimum DC current gain (hFE) of 180, providing effective amplification and switching performance. The maximum power dissipation rating of 783 mW allows for adequate heat dissipation in typical operating conditions. The device operates within an extended temperature range from -55°C to +150°C, making it suitable for challenging industrial and automotive environments.
Conforming to the automotive standard AEC-Q101, NSS40302PDR2G meets strict reliability requirements for automotive electronics. Its maximum transition frequency of 100 MHz supports high-speed switching applications. The transistor dimensions - 1.75 mm height, 5 mm length, and 4 mm width - facilitate compact PCB designs especially in space-constrained applications.
This bipolar transistor package is ideal for use in industrial, automotive, power management, and switching applications requiring efficient dual transistor integration. It supports surface mount technology assembly lines, enhancing manufacturing efficiency and reducing production downtime.
This transistor assembly features isolated NPN and PNP configurations in a compact 8-Pin SOIC package. Maximum power dissipation of 783 mW supports efficient thermal management. High DC current gain with a minimum hFE of 180 ensures reliable switching performance.
Wide operating temperature range from -55°C to 150°C for robust industrial applications. Designed according to the automotive AEC-Q101 standard ensuring high reliability for automotive systems. Maximum transition frequency of 100 MHz suitable for high-frequency switching circuits.
Compact dimensions: height 1.75 mm, length 5 mm, and width 4 mm for space-saving PCB layouts. Surface mountable type ensures ease of assembly in automated manufacturing processes. Explore the Electronics & Electricals category on EnvMart for high-quality Bipolar Transistors and semiconductor components by onsemi and other leading brands.
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