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onsemi Power PNP Transistor 7A 100V 3-Pin TO-220 KSA1010YTU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 29.03mm
Length 10.67mm
Model KSA1010YTU
Width 4.7mm
Mount Type Through Hole
Series KSA1010
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo 100V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO -100V
Maximum Power Dissipation Pd 40W
Maximum DC Collector Current Idc 7A
Transistor Configuration Single

Key Features

  • Maximum DC collector current of 7A suitable for robust power applications.
  • Collector-emitter voltage rating of 100V ensuring effective voltage handling.
  • Through-hole mount type with TO-220 package for ease of PCB assembly.
  • Single transistor configuration with PNP polarity for versatile circuit use.
  • High power dissipation capacity of 40W for improved thermal performance.
  • Wide operating temperature range up to 150°C for reliability in harsh environments.
  • Minimum DC current gain of 20 ensuring efficient amplification.
  • Ideal for industrial, power electronics, and discrete semiconductor applications.

Product Description

onsemi KSA1010YTU power PNP transistor is designed for demanding circuits requiring high current and voltage handling within a compact 3-pin TO-220 through-hole package. This transistor supports a maximum DC collector current of 7A and a collector-emitter voltage rating of 100V, providing robust performance for power applications.

The transistor features a single PNP configuration, enabling use in a variety of amplification and switching circuits. With a maximum power dissipation of 40W, it ensures excellent thermal stability under operational loads.

Its wide operating temperature up to 150°C ensures reliable functionality in industrial, manufacturing, and power control environments. The compact dimensions facilitate easy integration into PCB assemblies.

Additional features include a minimum DC current gain (hFE) of 20 and maximum collector base voltage of -100V, making it suitable for precise bipolar junction transistor applications.

This transistor meets general industrial standards without automotive certification, making it ideal for diverse discrete semiconductor usage in power electronics, industrial automation, HVAC systems, and laboratory instrumentation.

Maximum DC collector current of 7A suitable for robust power applications. Collector-emitter voltage rating of 100V ensuring effective voltage handling. Through-hole mount type with TO-220 package for ease of PCB assembly.

Single transistor configuration with PNP polarity for versatile circuit use. High power dissipation capacity of 40W for improved thermal performance. Wide operating temperature range up to 150°C for reliability in harsh environments.

Minimum DC current gain of 20 ensuring efficient amplification. Compact dimensions: height 29.03mm, length 10.67mm, width 4.7mm. Ideal for industrial, power electronics, and discrete semiconductor applications. Explore EnvMart’s extensive range of Bipolar Transistors for reliable power management and control components.

onsemi Power PNP Transistor 7A 100V 3-Pin TO-220 KSA1010YTU
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Frequently Asked Questions

The maximum DC collector current for this model is 7A, making it suitable for robust power applications.

This transistor has a collector-emitter voltage rating of 100V, ensuring effective voltage handling in circuits.

It uses a TO-220 package type, which is a through-hole mount design for ease of PCB assembly.

The maximum power dissipation capacity of this unit is 40W, which contributes to improved thermal performance.

It has a wide operating temperature range up to 150°C, ensuring reliability in harsh environments.

The minimum DC current gain (hFE) for this transistor is 20, ensuring efficient amplification in circuits.

The dimensions of this transistor are 29.03mm in height, 10.67mm in length, and 4.7mm in width.

This model features a single transistor configuration with PNP polarity, suitable for versatile circuit use.

The maximum collector base voltage for this transistor is -100V, allowing for precise bipolar junction transistor applications.

Yes, it is ideal for industrial, power electronics, and discrete semiconductor applications due to its specifications.

The maximum emitter base voltage (VEBO) for this transistor is -7V, which is relevant for circuit design considerations.

This model is manufactured in India, meeting general industrial standards.

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