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Toshiba Bipolar PNP Transistor 800 mA, 15 V, SOT-346 Package 2SA1362-GR,LF(T

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Toshiba Bipolar PNP Transistor 800 mA, 15 V, SOT-346 Package 2SA1362-GR,LF(T

Name: Toshiba Bipolar PNP Transistor 800 mA, 15 V, SOT-346 Package 2SA1362-GR,LF(T
Brand: Toshiba
SKU: 411911
Price: 0.22 USD
Availability: InStock

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Category Bipolar Transistors Brand Toshiba Condition New

Specifications

Country of Origin	Thailand
Brand	Toshiba
Height	1.26mm
Length	2.9mm
Model	2SA1362-GR,LF(T
Width	2.5mm
Mount Type	Surface
Series	2SA1362
Maximum Operating Temperature	150°C
Package Type	SOT-346 (SC-59)
Pin Count	3
Maximum Collector Emitter Voltage Vceo	15V
Minimum DC Current Gain hFE	40
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	-15V
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	800mA
Transistor Configuration	Single
Maximum Transition Frequency ft	120MHz

Key Features

This transistor has a maximum DC collector current of 800 mA.
The maximum collector emitter voltage is rated at 15 V.
It comes in a compact SOT-346 (SC-59) surface mount package.
The transistor provides a minimum DC current gain (hFE) of 40.
The maximum power dissipation is 200 mW supporting stable operation.
It has a maximum operating temperature of 150°C for high reliability.
The device has a maximum transition frequency of 120 MHz, suitable for high-speed switching.
The transistor polarity is PNP type with single configuration.

Product Description

Toshiba 2SA1362-GR,LF(T Bipolar PNP Transistor provides reliable performance in surface mount applications with its robust electrical characteristics. It supports a maximum DC collector current of 800 mA and a collector emitter voltage up to 15 V, making it suitable for various low-power amplification and switching tasks in electronic circuits.

This transistor uses the SOT-346 (SC-59) package type, optimized for surface mounting on printed circuit boards, facilitating compact and efficient electronic design. Its minimum DC current gain (hFE) of 40 ensures good amplification factor, and power dissipation of 200 mW allows it to operate efficiently while maintaining stable thermal performance up to 150°C.

With a maximum transition frequency of 120 MHz, the transistor is capable of high-speed switching needed in communications and signal processing applications. This single configuration PNP transistor features a compact form factor with 3 pins and precise pin spacing, simplifying integration into a wide range of industrial, manufacturing, electronics, and laboratory semiconductor designs.

The device is manufactured in Thailand, ensuring quality and consistency suitable for industrial and commercial applications. It meets standard semiconductor quality attributes despite not having specific certifications listed.

Maximum DC collector current of 800 mA. Collector emitter voltage rating of 15 V. SOT-346 (SC-59) surface mount packaging. Minimum DC current gain is 40. Maximum power dissipation of 200 mW. Operating temperature up to 150°C.

High switching frequency of 120 MHz. PNP transistor configuration with 3 pins. Compact size with 2.9 mm length and 2.5 mm width. Manufactured in Thailand maintaining quality standards.

This transistor is ideal for use in industrial electronics, telecommunications, consumer electronics, and other applications requiring reliable low-power PNP transistor operation. Explore more Toshiba semiconductor components for diverse electronic engineering needs at EnvMart.

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